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Deposition Profile Control of Carbon Films on Patterned Substrates using a Hydrogen-assited Plasma CVD Method

Published online by Cambridge University Press:  31 January 2011

Takuya Nomura ,
Kazunori Koga ,
Masaharu Shiratani ,
Yuichi Setsuhara ,
Makoto Sekine  and
Masaru Hori
Takuya Nomura
Affiliation:
t.nomura@plasma.ed.kyushu-u.ac.jp, Kyushu University, Fukuoka, Japan
Kazunori Koga
Affiliation:
koga@ed.kyushu-u.ac.jp, Kyushu University, JST CREST, Fukuoka, Japan
Masaharu Shiratani
Affiliation:
siratani@ed.kyushu-u.ac.jp, Kyushu University, JST CREST, Fukuoka, Japan
Yuichi Setsuhara
Affiliation:
setsuhara@jwri.osaka-u.ac.jp, Osaka University, JST CREST, Osaka, Japan
Makoto Sekine
Affiliation:
sekine@plasma.engg.nagoya-u.ac.jp, Nagoya University, JST CREST, Nagoya, Japan
Masaru Hori
Affiliation:
hori@nuee.nagoya-u.ac.jp, Nagoya University, JST CREST, Nagoya, Japan
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Abstract

We have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.

Keywords

Cmicroelectro-mechanical (MEMS)plasma-enhanced CVD (PECVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1222: Symposium DD – Microelectromechanical Systems — Materials and Devices III , 2009 , 1222-DD05-16
Copyright
Copyright © Materials Research Society 2010

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References

[1] Robertson, J. Prog. Solid State Chem. 21 199 (1991).Google Scholar
[2] Robertson, J. Surf. Coatings Technol. 50 185 (1992).Google Scholar
[3] Robertson, J. Adv. Phys. 35 317 (1986).Google Scholar
[4] Robertson, J. Materials Sci. and Engineering R37 129–281 (2004).Google Scholar
[5] Voevodin, A.A. Donley, M.S. Surf. Coatings Technol. 82 199 (1996).Google Scholar
[6] Shiratani, M. Kawasaki, H. Fukuzawa, T. Kinoshita, T. and Watanabe, Y.: J. Phys. D29 2754 (1996).Google Scholar
[7] Jin, H. J. Shiratani, M., Kawasaki, T. Fukuzawa, T. Kinoshita, T. Watanabe, Y. Kawasaki, H. and Toyofuku, M.: J. Vac. Sci. & Technol. A17 726 (1999).Google Scholar
[8] Jin, H. J. Shiratani, M. Nakatake, Y. Fukuzawa, T. Kinoshita, T. Watanabe, Y. and Toyofuku, M.: Jpn. J. Appl. Phys. 38, 4492, (1999).Google Scholar
[9] Shiratani, M. Jin, H. J. Takenaka, K. Koga, K. Kinoshita, T. and Watanabe, Y. Sci. Technol. Adv Matr. 2 505 (2001).Google Scholar
[10] Takenaka, K. Shiratani, M. Onishi, M. Takeshita, M. Kinoshita, T. Koga, K. and Watanabe, Y. Mater. Sci. Semi. Processing 5 301 (2002).Google Scholar
[11] Takenaka, K. Kita, M. Kinoshita, T. Koga, K. Shiratani, M. and Watanabe, Y. J. Vac. Sci. Technol. A22 1903 (2004).Google Scholar
[12] Takenaka, K. Shiratani, M. Takeshita, M. Kita, M. Koga, K. and Watanabe, Y. Pure Appl. Chem. 77 391 (2005).Google Scholar
[13] Takenaka, K. Koga, K. Shiratani, M. Watanabe, Y. and Shingen, T. Thin Solid Films 506 197 (2006).Google Scholar
[14] Umetsu, Jun, Inoue, Kazuhiko, Koga, Kazunori and Shiratani, Masaharu, Journal of Physics: Conference Series 100 062007 (2008).Google Scholar
[15] Kokura, H. Nakamura, K., Ghanashev, I. P. and Sugai, H. Jpn. J. Appl., Phys., 38, 5262, (1999).Google Scholar
[16] Jacob, W. Thin Solid Films, 326 1 (1998).Google Scholar
[17] Gathen, V. Schulz-von der and Döbele, H.F. D, Plasma Chem. Plasma Process.bele Process., 16 461 (1996).Google Scholar