Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-29T14:20:12.818Z Has data issue: false hasContentIssue false

A Detailed Study of the Synthesis of Bismuth Thin Films by PVD-Methods and their Structural Characterization

Published online by Cambridge University Press:  04 January 2013

Enrique Camps
Affiliation:
Instituto Nacional de Investigaciones Nucleares, Ocoyoacac, MEX,
Sandra E. Rodil
Affiliation:
Instituto de Investigaciones en Materiales – UNAM, México, DF
J. Antonio Salas
Affiliation:
Centro Nacional de Metrología, Querétaro, QRO 76246, MEXICO
Horacio V. Estrada
Affiliation:
Centro Nacional de Metrología, Querétaro, QRO 76246, MEXICO
Get access

Abstract

A comprehensive and rather complete study for the synthesis of Bismuth thin-films using physical vapor deposition (PVD) techniques aimed at identifying key features of their crystallographic structure and morphology/topography, as a function of the synthesis method is presented. These films were deposited on oxidized and non-oxidized polished silicon substrates, glass-plates and polyimide flexible films, by thermal evaporation (resistive boat and e-beam) DC- and RF-magnetron assisted sputtering, and pulsed laser (ablation) deposition (PLD). The synthesis was performed controlling the main deposition parameters of these methods.

XRD-spectra conclusively indicate that the films can be preferentially oriented along the [003] or [012] Bi-structure’s directions, depending on the source-to- substrate (STS)-distance, sputtering power, substrate’s temperature and PLD ion’s kinetic energy. It is also concluded that a relatively short STS-distance results in a rather polycrystalline structure, near independent to the used sputtering power.

Type
Articles
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Du, X. and Hebard, A. F., “Large Magnetoresistance of Bismuth/Gold Films Thermally Deposited onto Glass Substrates”, Appl. Phys. Lett. 82, 2293 (2003)10.1063/1.1566461CrossRefGoogle Scholar
Mishra, S. K., Satpathy, S. and Jepsen, O.Electronic Structure and Thermoelectric Properties of Bismuth Telluride and Bismuth Selenide”, J. Phys.: Condens. Matter 9, 461 (1997)Google Scholar
de Kuijper, A. H. and Bisschop, J., “Temperature Dependence of Concentrations and Mobilities in Thin Bismuth Films”, Thin Solid Films, 110, pp.99106, (1983).10.1016/0040-6090(83)90214-6CrossRefGoogle Scholar
Yang, F. Y., Liu, K., Chien, C. L. and Searson, P. C., “Large Magnetoresistance and Finite-Size Effects in Electrodeposited Single-Crystal Bi-Thin Films”, Phys. Rev. Lett., 82, 16 (1999).10.1103/PhysRevLett.82.3328CrossRefGoogle Scholar
Estrada, H. V., “Investigation of Nanometric Thin-Film Bismuth Piezoresistors Deposited on Silicon Substrates”, Proceedings of the XXI International Materials Research Congress, Cancun, Mexico, August 2012.Google Scholar
Zhang, Z., Yinga, J. Y., Dresselhaus, M. S., Bismuth quantum-wire arrays fabricated by a vacuum melting and pressure injection process, J. Mater. Res., 13, 7 (1998).10.1557/JMR.1998.0243CrossRefGoogle Scholar