Hostname: page-component-745bb68f8f-l4dxg Total loading time: 0 Render date: 2025-01-15T01:17:20.659Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of high-current ionic liquid ion source toward surface modification

Published online by Cambridge University Press:  09 May 2013

Mitsuaki Takeuchi ,
Takuya Hamaguchi ,
Hiromichi Ryuto  and
Gikan H Takaoka
Mitsuaki Takeuchi
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Takuya Hamaguchi
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Hiromichi Ryuto
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Gikan H Takaoka
Affiliation:
Photonics and Electronics Science and Engineering Center, Kyoto University, Kyotodaigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan
Get access

Abstract

Ionic liquid (IL) ion sources with different emitter tip materials and tip numbers were developed and examined on ion beam characteristics with respect to its ILs wettability. As a result of ion current measurements, the most stable emission current was obtained for the graphite emitter tip and the ion current increased with increase of the tip number. The results indicate that the emitter wettability corresponding to the supplying flow rate and the number of emission site play an important role to stabilize and increase the beam current.

Keywords

ion-beam processingion-solid interactionssurface reaction
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1575: Symposium VV – Materials Applications of Ionic Liquids , 2013 , mrss13-1575-vv03-08
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Guilet, S., Perez-Martinez, C., Jegou, P., Lozano, P., Gierak, J., Microelectronic Engineering 88 (2011) 1968.CrossRefGoogle Scholar
Romero-Sanz, I., De Carcer, I.A., De La Mora, J.F., Journal of Propulsion and Power 21 (2005) 239.CrossRefGoogle Scholar
Fujiwara, Y., Saito, N., Nonaka, H., Ichimura, S., J. Appl. Phys. 111 (2012) 064901.CrossRefGoogle Scholar
Lozano, P., Martinez-Sanchez, M., Lopez-Urdiales, J.M., 4th International Spacecraft Propulsion Conference 555 (2004) 36.Google Scholar
Castro, S., Larriba, C., Fernandez de la Mora, J., Lozano, P., Sümer, S., Yoshida, Y., Saito, G., J. Appl. Phys. 102 (2007) 094310.CrossRefGoogle Scholar
Chiu, Y.H., Gaeta, G., Levandier, D.J., Dressler, R.A., Boatz, J.A., International Journal of Mass Spectrometry 265 (2007) 146.CrossRefGoogle Scholar
Garoz, D., Bueno, C., Larriba, C., Castro, S., Romero-Sanz, I., Fernandez de la Mora, J., Yoshida, Y., Saito, G., J. Appl. Phys. 102 (2007) 064913.CrossRefGoogle Scholar
Takeuchi, M., Ryuto, H., Takaoka, G.H., in:, AIP Conf. Proc, 2011, pp. 456–459.CrossRefGoogle Scholar
Taylor, G., Proceedings of the Royal Society a: Mathematical, Physical and Engineering Sciences 280 (1964) 383.Google Scholar
Kingham, D.R., Swanson, L.W., Appl. Phys. A 34 (1984) 123.CrossRefGoogle Scholar
Loeb, L., Kip, A., Hudson, G., Bennett, W., Phys. Rev. 60 (1941) 714.CrossRefGoogle Scholar
Gomer, R., Applied Physics a: Materials Science & Processing 19 (1979) 365.CrossRefGoogle Scholar
Tomadakis, M.M., Journal of Composite Materials 39 (2005) 163.CrossRefGoogle Scholar