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Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films

Published online by Cambridge University Press:  01 February 2011

Huai Huang ,
Junjing Bao ,
Huai Huang ,
Junjun Liu ,
Ryan Scott Smith ,
Yangming Sun ,
Paul S. Ho ,
Michael L. McSwiney ,
Mansour Moinpour  and
Grant M Kloster
Huai Huang
Affiliation:
hhuang@physics.utexas.edu, The University of Texas at Austin, Laboratory for Interconnect and Packaging, Microelectronics Research Center,, the University of Texas at Austin, Austin, TX 78758, Austin, TX, 78758, United States, 512-471-8995, 512-471-8969
Junjing Bao
Affiliation:
jjbao@physics.utexas.edu, Microelectronics Research Center, Laboratory for Interconnect and Packaging, Pickle Research Campus, The University of Texas at Austin, Austin, TX, 78758, United States
Huai Huang
Affiliation:
hhuang@physics.utexas.edu, Microelectronics Research Center, Laboratory for Interconnect and Packaging, Pickle Research Campus, The University of Texas at Austin, Austin, TX, 78758, United States
Junjun Liu
Affiliation:
junjun.liu@us.tel.com, Microelectronics Research Center, Laboratory for Interconnect and Packaging, Pickle Research Campus, The University of Texas at Austin, Austin, TX, 78758, United States
Ryan Scott Smith
Affiliation:
scott_smith@mail.utexas.edu, Microelectronics Research Center, Laboratory for Interconnect and Packaging, Pickle Research Campus, The University of Texas at Austin, Austin, TX, 78758, United States
Yangming Sun
Affiliation:
yangming@mail.utexas.edu, Microelectronics Research Center, Laboratory for Interconnect and Packaging, Pickle Research Campus, The University of Texas at Austin, Austin, TX, 78758, United States
Paul S. Ho
Affiliation:
paulho@mail.utexas.edu, Microelectronics Research Center, Laboratory for Interconnect and Packaging, Pickle Research Campus, The University of Texas at Austin, Austin, TX, 78758, United States
Michael L. McSwiney
Affiliation:
michael.l.mcswiney@intel.com, Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Mansour Moinpour
Affiliation:
mansour.moinpour@intel.com, Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
Grant M Kloster
Affiliation:
grant.m.kloster@intel.com, Intel Corporation, Logic Technology Development, Hillsboro, OR, 97124, United States
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Abstract

Methyl depletion and subsequent moisture uptake have been found to be the primary plasma damages leading to dielectric loss in porous organosilicate (OSG) low-k dielectrics. A vacuum vapor silylation process was developed for dielectric recovery of plasma damaged OSG low-k dielectrics. The methyl or phenyl containing silylation agents were used to convert the hydrophilic -OH groups to hydrophobic groups. Compared with Trimethylchlorosilane (TMCS) and Phenyltrimethoxysilane (PTMOS), Dimethyldichlorosilane (DMDCS) was found to be more effective in recovering surface carbon concentration and surface hydrophobicity. But the carbon recovery effect was limited to the surface region.

Alternatively, UV radiation with thermal activation was applied for dielectric recovery of plasma damaged OSG low-k dielectrics. The combined UV/thermal process was found to be efficient in reducing −OH, physisorbed water, and C=O bonds. The dielectric constant was recovered within 5% of the pristine sample and the leakage current was also much reduced. Aging test in air showed that no moisture retake was observed, indicating the repaired film was stable.

Keywords

dielectricreactive ion etchingmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N02-10
Copyright
Copyright © Materials Research Society 2008

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