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Diffusion of Atoms Implanted in Poly Silicon Layer on Insulator

Published online by Cambridge University Press:  22 February 2011

M. Takai ,
M. Izumi ,
T. Yamamoto ,
A. Kinomura ,
K. Gamo ,
T. Minamisono  and
S. Namba
M. Takai
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
M. Izumi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
T. Yamamoto
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
A. Kinomura
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
T. Minamisono
Affiliation:
Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan
S. Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Diffusion of arsenic implanted in poly-silicon on insulator structures after furnace and rapid thermal annealing (RTA) has been investigated by Rutherford backscattering (RBS) and Hall effect measurements. The diffusivity for As in poly–Si on insulator is represented by D = 3.12 × 104 exp (− 3.86/kT) cm/sec for the tail region after both RTA and furnace annealing and D = 34.0 exp (− 3.42/kT) cm2/sec for the peak region after RTA. Poly–Si layers after implantation and annealing were found to have tensile stresses of 3.0 – 4.0 kbar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 341
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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