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Direct Observation of Bulk and Interface States in GaN on Sapphire grown by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  17 March 2011

S. H. Goss ,
A. P. Young ,
L. J. Brillson ,
D. C. Look  and
R. J. Molnar
S. H. Goss
Affiliation:
Center for Materials Research, Ohio State University, Columbus OH
A. P. Young
Affiliation:
Department of Electrical Engineering, Ohio State University, Columbus OH Phone (614)-292-8015, Fax (614)-688-4688
L. J. Brillson
Affiliation:
Center for Materials Research, Ohio State University, Columbus OH Department of Electrical Engineering, Ohio State University, Columbus OH Phone (614)-292-8015, Fax (614)-688-4688
D. C. Look
Affiliation:
Wright State University, Dayton OH
R. J. Molnar
Affiliation:
Massachusetts Institute of Technology Lincoln Labs, Lexington MA
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Abstract

We have used an ultrahigh vacuum scanning electron microscope to carry out cross sectional secondary electron imaging, cathodoluminescence spectroscopy, and cathodoluminescence imaging on GaN grown on sapphire by hydride vapor phase epitaxy. These measurements provide evidence for deep level defects highly localized at the GaN, sapphire interface as well as defects extending into both the semiconductor film and the substrate. The different spatial distributions of these radiative defects provide information on the physical origin of these electrically active features.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.59
Copyright
Copyright © Materials Research Society 2001

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References

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