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Dopant Diffusion in Silicon Substrate during Oxynitride Process

Published online by Cambridge University Press:  17 March 2011

Nobutoshi Aoki ,
Toshitake Yaegashi ,
Yuji Takeuchi ,
Makoto Fujiwara ,
Naoki Kusunoki ,
Tsutomu Sato ,
Ichiro Mizushima ,
Yoshitaka Tsunashima ,
Hiroaki Hazama  and
Seiichi Aritome
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Nobutoshi Aoki
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Toshitake Yaegashi
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Yuji Takeuchi
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Makoto Fujiwara
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Naoki Kusunoki
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Tsutomu Sato
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Ichiro Mizushima
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Yoshitaka Tsunashima
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Hiroaki Hazama
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Seiichi Aritome
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Riichiro Shirota
Affiliation:
Microelectronics Engineering Laboratory, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
Takashi Shimizu
Affiliation:
Manufacturing Engineering Center, TOSHIBA Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama, 235-8522, Japan
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Abstract

We found an anomalous behavior of dopant diffusion in Si substrate during the oxynitride process. SIMS measurements showed a notably enhanced diffusion during the NO and N2O oxynitride process. The considerably enhanced diffusion was also observed in re-oxidation of oxynitride film grown by the NO annealing or NH3 nitridation of a SiO2 film. In order to simulate the enhanced diffusion, an enhancement coefficient was introduced, showing that the simulation results are in reasonable agreement with the experimental ones. We applied the diffusion model to the simulations of MOSFETs fabricated under various conditions of the oxynitride process. The device characteristics of MOSFETs were successfully reproduced by adopting a suitable dependence of nitrogen concentration CN on the surface recombination rate of interstitial Si at the oxynitride/Si substrate interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.5
Copyright
Copyright © Materials Research Society 2000

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References

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