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Doping Experiments in ZNO

Published online by Cambridge University Press:  21 March 2011

R.E. Stauber ,
P.A. Parilla ,
J.D. Perkins ,
J.A. Del Cueto  and
D.S. Ginley
R.E. Stauber
Affiliation:
University of Colorado, Boulder CO 80304, stauber@ucsu.colorado.edu
P.A. Parilla
Affiliation:
National Renewable Energy Lab, Golden CO 80401
J.D. Perkins
Affiliation:
National Renewable Energy Lab, Golden CO 80401
J.A. Del Cueto
Affiliation:
National Renewable Energy Lab, Golden CO 80401
D.S. Ginley
Affiliation:
National Renewable Energy Lab, Golden CO 80401
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Abstract

This paper reports on attempts to fabricate transparent electrically conductive p-type ZnO by pulsed laser deposition (PLD) and sputtering using N2, N2O and NO gases. Expanding on the work of Kawai and coworkers [1,2], we used an ion source, rather than an ECR source in the PLD chamber to dissociate N2O gas, and explored the use of aluminum in addition to gallium as potential co-dopants. The most promising results have been obtained with DC reactive sputtering of gallium-doped zinc metal targets. A three to six order of magnitude reduction in n-type carrier density was observed when 2% of the argon sputtering gas was replaced with NO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F2.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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