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The Effect of (Ba,Sr) and (Mn,Fe,W) Dopants on the Microwave Properties of BaxSr1−xTiO3 Thin Films

Published online by Cambridge University Press:  10 February 2011

Wontae Chang ,
James S. Horwitz ,
Won-Jeong Kim ,
Jeffrey M. Pond ,
Steven W. Kirchoefer  and
Douglas B. Chrisey
Wontae Chang
Affiliation:
Institute for Materials Science, School of Engineering and Applied ScienceGeorge Washington University725 23rd Street, NW, Washington, D.C. 20052
James S. Horwitz
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Won-Jeong Kim
Affiliation:
SFA Inc., 1401 McCormick Dr., Largo, MD20774
Jeffrey M. Pond
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Steven W. Kirchoefer
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Douglas B. Chrisey
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
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Abstract

Single phase BaxSr1−xTiO3 (x=0.5 and 0.6) thin films (∼5000Å thick) have been deposited onto (100) MgO single crystal substrate with (Ba,Sr) compensated and/or (Mn,Fe,W) doped targets using pulsed laser deposition (PLD). The room temperature capacitance (C) and dielectric Q (1/tanδ) have been measured at microwave frequencies of I to 20 GHz as a function of electric field (0-80kV/cm). Microstructural defects associated with cation and anion vacancies have been observed in BaxSr1−xTiO3 films. Compensation of the ablation target with excess Ba and Sr tends to increase the dielectric constant and the dielectric Q. A film deposited with (Ba,Sr) compensated target has been obtained with 25% tuning, where % tuning is defined as {(C(0)-C(E))/C(O))×100, and dielectric Q of ∼ 100 at room temperature (1 — 10 GHz) for DC bias field (E=67 kV/cm). A further increase in the dielectric Q is observed by the addition of donor/acceptor dopants such as Mn, Fe, and W (Q≈100-240). The effects of (Ba, Sr) compensation and (Mn,Fe,W) doping on the film structure and dielectric properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 699
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Triebwasser, S., Phys. Rev. 114, 63 (1959).Google Scholar
2. Rupprecht, G. and Bell, R.O., Phys. Rev. 125, 1915 (1962).Google Scholar
3. Kirchoefer, S.W., Pond, J.M., Carter, A.C., Chang, W., Agarwal, K.K., Horwitz, J.S. and Chrisey, D.B., Microwave Opt. Technol. Lett. 18, 168 (1998).Google Scholar
4. Kajiyoshi, K., Yoshimura, M., Hamaji, Y., Tomono, K. and Kasanami, T., J. Mater. Res. 11, 169 (1996).Google Scholar
5. Bethe, K. and Welz, F., Mat. Res. Bull. 6, 209 (1971).Google Scholar
6. Shin, S., Mat. Res. Bull. 16, 299 (1981).Google Scholar
7. Ye, J. and Nakamura, K., Phys. Rev. B 48, 7554 (1993).Google Scholar
8. Dai, X.H., Li, Z., Xu, X.Z., Chan, S.-K. and Lam, D.J., Ferroelectrics 135, 39 (1992).Google Scholar
9. Cross, L.E., Ferroelectrics 151, 305 (1994).Google Scholar
10. Tsai, M.S., Sun, S.C. and Tseng, T.Y., J. Appl. Phys. 82, 3482 (1997).Google Scholar
11. Nakamura, T., Yamnanka, Y., Morimoto, A. and Shimizu, T., Jpn. J. Appl. Phys. 34, 5150 (1995).Google Scholar
12. Hemer, S.B., Selmi, F.A., Varadan, V.V. and Varadan, V.K., Mater. Lett. 15, 317 (1993).Google Scholar
13. Chang, H., Gao, C., Takeuchi, I., Yoo, Y., Wang, J., Schultz, P.G., and Xiang, X.-D., Appl. Phys. Lett. 72, 2185 (1998).Google Scholar
14. Aggarwal, S. and Ramesh, R., Annu. Rev. Mater. Sci. 28, 463 (1998).Google Scholar
15. Wilcox, N., Ravikumar, V., Rodrigues, R.P., Dravid, V.P., Vollmann, M., Waser, R., Soni, K.K. and Adriaens, A.G., Solid State Ionics 75, 127 (1995).Google Scholar