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Effect of Cerium Silicate Formation on the Structural and Electrical Properties of Pt/SrBi2Ta2O9/CeO2/Si Capacitors

Published online by Cambridge University Press:  10 February 2011

Ho Nyung Lee ,
Dong Suk Shin ,
Yong Tae Kim  and
Sung Ho Chow
Ho Nyung Lee
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 130-650, Korea
Dong Suk Shin
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 130-650, Korea
Yong Tae Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul 130-650, Korea
Sung Ho Chow
Affiliation:
Department of Physics, Korea University, Seoul 136-701, Korea
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Abstract

We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100 °C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 543
Copyright
Copyright © Materials Research Society 1999

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References

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