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Effect of Cu Migration in a Field Induced Dielectric Failure

Published online by Cambridge University Press:  01 February 2011

Sang-Soo Hwang ,
Sung-Yup Jung  and
Young-Chang Joo
Sang-Soo Hwang
Affiliation:
const94@snu.ac.kr, Seoul National University, School of Material Sci. & Eng., San 56-1 Sillim-dong Gwanak-gu, Seoul, N/A, 151742, Korea, Republic of, 82-2-873-5818, 82-2-883-8197
Sung-Yup Jung
Affiliation:
jsy9952@snu.ac.kr, Seoul National University, School of Material Sci. & Eng., San 56-1 Sillim-dong Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
Young-Chang Joo
Affiliation:
ycjoo@snu.ac.kr, Seoul National University, School of Material Sci. & Eng., San 56-1 Sillim-dong Gwanak-gu, Seoul, N/A, 151-742, Korea, Republic of
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Abstract

For the study of dielectric failures by Cu migration, TDDB (time dependent dielectric breakdown) and 1-D FDM simulation was carried out. We tested TDDB using a simple MIS structure with no barrier Cu electrode. From our TDDB results, the TTF's in the acceleration condition and the characteristic parameter of TDDB were obtained. In the simulation parts, 1-D FDM simulation was accomplished considering space charge effect due to Cu ions.

The objective of TDDB is to predict of TTF (time to failure) in the service condition form the results of an accelerating condition. The characteristic of TTF's follows E model in the accelerating condition, in the service condition, the deviation from E model was observed. This different characteristic of TTF can be explained by the mechanism of Cu migration enhanced by an applied E field. Our simulation and TDDB results reveal that the deviation from E model does not mean the change of failure mechanism, but it shows the characteristics of Cu migration.

Keywords

Cudielectric propertiessimulation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F06-07
Copyright
Copyright © Materials Research Society 2006

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