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The Effect of Methylating Treatments on the Dielectric Reliability of Low-k/Cu Structures

Published online by Cambridge University Press:  01 February 2011

Swarnal Borthakur ,
Sri Satyanarayana ,
Andreas Knorr  and
Paul S. Ho
Swarnal Borthakur
Affiliation:
Sematech The University of Texas at Austin
Sri Satyanarayana
Affiliation:
Sematech
Andreas Knorr
Affiliation:
Sematech Infineon Technologies Sematech, 2706 Montopolis Drive Austin, TX 78741, USA
Paul S. Ho
Affiliation:
The University of Texas at Austin
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Abstract

Post ash chemical treatments were evaluated for improving the reliability of Cu/low-k structures. The RC delays, leakage current, ramp-voltage-breakdown and timedependent- dielectric-breakdown lifetimes resulting from different treatments were compared. The pitch dependence of capacitance and breakdown was also evaluated. Post ash chemical treatments were more beneficial for the smaller line spaces. FTIR and TEM/EELS analysis were performed to determine the chemical changes occurring at the sidewall due to the post ash chemical treatments. The analysis showed that the chemical treatments increased the carbon content at the trench sidewalls. The post ash treatments were found to improve the electrical characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B8.12
Copyright
Copyright © Materials Research Society 2005

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