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Effect of Rapid Thermal Oxidation on Blue and Red Luminescence Bands of Porous Silicon

Published online by Cambridge University Press:  28 February 2011

S. Sen ,
A. J. Kontkiewicz ,
A. M. Kontkiewicz ,
G. Nowak ,
J. Siejka ,
P. Sakthivel ,
K. Ahmed ,
P. Mukherjee ,
S. Witanachchi  and
A. M. Hoff
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S. Sen
Affiliation:
Center for Microelectronics Research and
A. J. Kontkiewicz
Affiliation:
Center for Microelectronics Research and
A. M. Kontkiewicz
Affiliation:
Center for Microelectronics Research and
G. Nowak
Affiliation:
Center for Microelectronics Research and
J. Siejka
Affiliation:
Center for Microelectronics Research and
P. Sakthivel
Affiliation:
Department of Physics, University of South Florida, Tampa, FL 33620
K. Ahmed
Affiliation:
Department of Physics, University of South Florida, Tampa, FL 33620
P. Mukherjee
Affiliation:
Department of Physics, University of South Florida, Tampa, FL 33620
S. Witanachchi
Affiliation:
Department of Physics, University of South Florida, Tampa, FL 33620
A. M. Hoff
Affiliation:
Center for Microelectronics Research and
J. Lagowski
Affiliation:
Center for Microelectronics Research and
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Abstract

Photoluminescence (PL) of porous silicon after rapid thermal oxidation was studied using excitation energies of 5.0 and 6.4 eV. The emission spectra in both cases are dominated by a broad blue band centered at 430-450 nm and a much weaker red band positioned at 680-720 nm. Using atomic force microscopy (AFM), we have found a correlation between blue PL intensity and increase in feature size caused by progressive oxidation. The blue luminescence, found in porous Si only after oxidation, is identical, with respect to spectrum and fast decay, to that of thermally grown oxide on crystalline Si. Based on these findings, we conclude that the blue luminescence originates from SiO2 rather than from Si nanocrystals embedded in the oxide matrix. The red luminescence, on the contrary, has a different origin. The intensity of red band is a function of oxidation temperature and at RTP above 1050 °C, the red band is completely eliminated. The red luminescence characteristics are discussed in relation to the possible mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 369
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Canham, L.T., Appl. Phys Lett. 57, 1046 (1990).Google Scholar
2 Kovalev, D. I., Yaroshetzkii, I. D., Muschik, T., Petrova-Koch, V., and Koch, F., Appl. Phys. Lett. 64, 214 (1994).Google Scholar
3 Kontkiewicz, A. J., Kontkiewicz, A. M., Siejka, J., Sen, S., Nowak, G., Hoff, A. M., Sakthivel, P., Ahmed, K., Mukherjee, P., Witanachchi, S., and Lagowski, J., Appl. Phys Lett. 65, 1436 (1994).Google Scholar
4 Petrova-Koch, V., Muschik, T., Kux, A., Meyer, B. K., Koch, F., and Lehmann, V., Appl. Phys. Lett., 61, 943 (1992).Google Scholar
5 Kontkiewicz, A. J., Kontkiewicz, A. M., Weslowski, M., Sen, S., Edelman, P., and Lagowski, J., Inst. Phys. Conf. Ser. 135, 165 (1993).Google Scholar
6 Kontkiewicz, A. J., Kontkiewicz, A. M., Sen, S., Weslowski, M., Lagowski, J., Edelman, P., and Kowalewski, T, Materials Research Society Fall Meeting, Boston, MA, November 1993.Google Scholar
7 Mimura, Hidenori, Futagi, Toshiro, Matsumuto, Takahiro, Nakamura, Takato, and Kanemitsu, Yoshihiko, Jpn. J. Appl. Phys. 33, 586 (1994).Google Scholar
8 Ookubo, N., J. Appl. Phys. 74, 6375 (1993).Google Scholar
9 M. Hoff, A.. and Ruzyllo, J., Appl. Phys. Lett. 52, 1264 (1988).Google Scholar
10 Kumar, Rajesh, Kitoh, Yasuo, and Hara, Kunihiko, Appl. Phys. Lett. 63, 3032 (1993).Google Scholar
11 Stathis, J. H. and Kastner, M. A., Phys. Rev. B35, 2972 (1987).Google Scholar
12 Tsybeskov, L. and Fauchet, P. M., Appl. Phys. Lett. 64, 1983 (1994).Google Scholar
13 Brandt, M. S., Fuchs, H. D., Stutzmann, M., Weber, J., and Cardona, M., Solid State Commun. 81, 307 (1992).Google Scholar
14 Koch, F., MRS Symposium Proceedings 298, pp. 319, Pittsburgh, PA,1992.Google Scholar