Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-29T10:50:40.226Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of BEOL Stack on Thermal Mechanical Stress of Cu Lines

Published online by Cambridge University Press:  01 February 2011

Seung-Hyun Rhee ,
Conal E. Murray  and
Paul R. Besser
Seung-Hyun Rhee
Affiliation:
seung-hyun.rhee@amd.com, Advanced Micro Devices, BEOL Integration, United States, 845-894-2518
Conal E. Murray
Affiliation:
conal@us.ibm.com, IBM Research Division, T.J. Watson Laboratory, Yorktown Heights, NY, 10598, United States
Paul R. Besser
Affiliation:
paul.besser@amd.com, IBM Research Division, T.J. Watson Laboratory, Yorktown Heights, NY, 10598, United States
Get access

Abstract

The measurement and control of the stress state in BEOL interconnects are important to ensure structural integrity and long term reliability of integrated circuits. Thermal stress in interconnects is determined by the thermal-mechanical properties of Cu lines, substrate, and dielectric materials. The effect of BEOL stacks on thermal stress characteristics of Cu lines were investigated using X-ray diffraction stress measurements. The stress characteristics of M1 and M4 level interconnects in full low-k and low-k/oxide hybrid dielectric stacks were evaluated, and the results indicated reduced substrate confinement and an increased impact of the dielectric material on in-plane stresses in higher level interconnects. The effects of dielectric stack and material properties were examined and the implication in the stresses of multilevel interconnects are discussed.

Keywords

thermal stressesx-ray diffraction (XRD)Cu
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F08-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Besser, P.R., Joo, Y.-C., Winter, D., Ngo, M. Van, and Ortega, R., Mater. Res. Soc. Symp. Proc. 563, 189 (1999).Google Scholar
[2] Zschech, E. and Besser, P.R., IEEE IITC Proc. 233 (2000).Google Scholar
[3] Gan, D.W., Wang, G., and Ho, P.S., IEEE IITC Proc. 271 (2002).Google Scholar
[4] Paik, J.-M., Jung, J.-K., and Joo, Y.-C., IEEE IRPS Proc. 195 (2005).Google Scholar
[5] Rhee, S.-H., Du, Y., and Ho, P.S., J. Appl. Phys. 93, 3926 (2003).Google Scholar
[6] Zhai, C.J., Besser, P.R., Feustel, F., Marathe, A., and Blish, R.C., Mater. Res. Soc. Symp. Proc. 812 (2004).Google Scholar
[7] Kuschke, W.-M. and Arzt, E., Appl. Phys. Lett. 64, 1097 (1994).Google Scholar
[8] Flinn, P.A. and Chiang, C., J. Appl. Phys. 67, 2927 (1990).Google Scholar
[9] Clemens, B.M. and Bain, J.A., MRS Bull. 17, 46 (1992).Google Scholar
[10] Noyan, I.C. and Cohen, J.B., Residual Stress - Measurement by Diffraction and Interpretation (Springer-Verlag, New York, 1987).Google Scholar
[11] Segmuller, A. and Murakami, M., Treatise on Mater. Sci. and Tech. 27, 143 (1988).Google Scholar
[12] Rhee, S.-H. and Ho, P.S., J. Mater. Res. 18, 848 (2003).Google Scholar
[13] Shen, Y.-L., J. Mater. Res. 12, 2219 (1997).Google Scholar
[14] Kilijanski, M.S. and Shen, Y.-L., Microelectronics Reliability, 42, 259 (2002).Google Scholar