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Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy

Published online by Cambridge University Press:  01 February 2011

Serguei Chevtchenko ,
M A Reshchikov ,
K Zhu ,
Y-T Moon ,
A A Baski  and
H Morkoç
Serguei Chevtchenko
Affiliation:
chevtchenkos@vcu.edu, VCU, Electrical Engineering, 601 West Main Street, Room 447, P. O. Box 843072, Richmond, VA, 23284-3072, United States, (804) 827-7000 Ext. 451
M A Reshchikov
Affiliation:
mreshchi@vcu.edu, Virginia Commonwealth University, Physics, United States
K Zhu
Affiliation:
kzhu@mail1.vcu.edu, Virginia Commonwealth University, Electrical Engineering, United States
Y-T Moon
Affiliation:
kzhu@mail1.vcu.edu, Virginia Commonwealth University, Electrical Engineering, United States
A A Baski
Affiliation:
aabaski@vcu.edu, Virginia Commonwealth University, Physics, United States
H Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Electrical Engineering, United States
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Abstract

The influence of passivation with SiO2 and SiNx on optical properties and surface band bending in unintentionally doped GaN has been studied by steady-state photoluminescence (PL) and surface potential electric force microscopy (SP-EFM). For both types of passivation we observed a significant increase of PL intensity in air ambient at room temperature. The measured surface potential was the same for control and passivated samples within the experimental error. The value of the surface band-bending was determined as 1.0±0.2 eV in all cases. We suggest that the strong enhancement of PL is caused by reduction of contribution of the surface states to recombination of photogenerated carriers after passivation.

Keywords

passivationoptical propertiesluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-09
Copyright
Copyright © Materials Research Society 2006

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References

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