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The Effects of Hydrogen Dilution on VOC in a-Si:H Pin Solar Cells

Published online by Cambridge University Press:  15 February 2011

Qi Wang ,
Richard S. Crandall  and
Daxing Han
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401–3305
Richard S. Crandall
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401–3305
Daxing Han
Affiliation:
Department of Physics and Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599–3255
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Abstract

We study the effects of hydrogen dilution on the open circuit voltage of a-Si:H pin solar cells fabricated by rf glow discharge growth. We keep the p and n layers the same and only vary the i layer properties. A normal a-Si:H i layer, an H-diluted i layer, and a thin H-diluted layer inserted between p and normal i layer are selected for this study. We measure the JV characteristics and the internal electric field distribution using a transient-null-current technique both in annealed and light soaked states. We find that hydrogen dilution does stabilize the Voc either in a bulk H-diluted i layer or in a thin layer between p and normal i layer after 100 hours AMI sun light soaking. From dark IV measurement, both H-diluted cells show little change in current at voltage near Voc before and after light soaking; while the normal a-Si:H cell does show a noticeable change. Also the internal field measurements find a stronger electric field starting from p and i interface for both H-diluted cells compared to the normal a-Si:H cell. Furthermore, there are no measurable changes in the field profiles after 100 hour AMI light-soaking for both H-diluted and normal a-Si cells. All these suggest that hydrogen dilution increases the field strength near p and i interface, which is the key that leads to a more stable Voc of H-diluted cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 753
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Guha, S., Narasimhan, K.L., and Pietruszko, S.M., J. Appl. Phys. 52, 859 (1981).Google Scholar
2. Tsuo, Y.S., Xu, Y., Crandall, R.S., Han, D.X., Qiu, C., and Pankove, J.I., in Conf. Record of the 21th IEEE Photovoltaic Specialist Conf. (Kissimimee, FL. 1990 p. 1416.Google Scholar
3. Wang, Qi, Xu, Yueqin and Crandall, R. S., in 13th PV Program Review Vol. 353. p. 474 (1995).Google Scholar
4. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1997).Google Scholar
5. Datta, T. and Silver, M., Appl. Phys. Lett. 38 903 (1981).Google Scholar
6. Yeh, C. N., Han, D. X., and Wang, Q., in MRS proceeding 1997.Google Scholar
7. Yang, J., Xu, X., and Guha, S., in Amorphous Silicon Technology-1994, edited by Schiff, E., Hack, M., Madan, A., Powell, M., and Matsuda, A. (MRS. Pittsburgh, Pa. 1994) Vol. 336, P. 687.Google Scholar
8. Carlson, D. E., Arya, R.R., Bennett, M., Chen, L.-F., Jansen, K., Li, Y.-M., Maley, N., Morris, J., Newton, J., Oswald, R. S., Rajan, K., Vezzetti, D., Willing, F. and Yang, L., in 13th PV Program Review Vol. 353. p. 304 (1995).Google Scholar
9. Lee, Y., Jiao, L., Liu, H., Lu, Z., Collins, R. and Wronski, C.R., 25th IEEE Photovoltaic Specialists Conference, May, 1996, Washington D.C. p 1165.Google Scholar
10. Platz, R., Fisher, D.. Hof, C., Dubail, S., Meier, J., Kroll, U., and Shah, A., in Amorphous Silicon Technology-1996, edited by Hack, M., Schiff, E., Wagner, S., Schropp, R., and Matsuda, A.. (MRS. Pittsburgh, Pa. 1996) Vol. 420, P. 51.Google Scholar
11. Rech, B., Wieder, S., Siebke, F., Beneking, C., and Wager, H., in Amorphous Silicon Technology-1996, edited by Hack, M., Schiff, E., Wagner, S., Schropp, R., and Matsuda, A.. (MRS. Pittsburgh, Pa. 1996) Vol. 420, P. 33.Google Scholar