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Effects of Polarized Organosilane Self-Assembled Monolayers on Organic Single-Crystal Field-Effect Transistors

Published online by Cambridge University Press:  01 February 2011

J. Takey ,
T. Nishikaw ,
T. Takenobu ,
H. Shimotani ,
S. Kobayashi ,
T. Mitani  and
Y. Iwasa
J. Takey
Affiliation:
Materials Science Research Laboratory, CRIEPI, Komae, Japan.
T. Nishikaw
Affiliation:
Institute for Material Reasearch, Tohoku University, Sendai, Japan CREST, Japan JAIST, Tatsunokuchi, Japan
T. Takenobu
Affiliation:
Institute for Material Reasearch, Tohoku University, Sendai, Japan CREST, Japan
H. Shimotani
Affiliation:
Institute for Material Reasearch, Tohoku University, Sendai, Japan CREST, Japan
S. Kobayashi
Affiliation:
Institute for Material Reasearch, Tohoku University, Sendai, Japan CREST, Japan
T. Mitani
Affiliation:
JAIST, Tatsunokuchi, Japan
Y. Iwasa
Affiliation:
Institute for Material Reasearch, Tohoku University, Sendai, Japan CREST, Japan
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Abstract

Organosilane self-assembled monolayers, embedded in organic single-crystal field-effect transistors, significantly affect subthreshold properties in the transfer characteristics. The monolayer of either polarized or nearly unpolarized molecules is deposited on a SiO2/doped Si substrate before softly attaching a rubrene thin single crystal to form the “laminated crystal” transistors. As a result of effective passivation of the SiO2 surface, the device has achieved a subthreshold swing as low as 0.11 V/decade. It is also demonstrated that threshold gate voltage is shifted by polarization of the monolayers, indicating that threshold of the device is adjustable by the choice of silane materials. Both of the functions are closely associated with low-power applications such as logic-circuit components.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 871: Symposium I – Organic Thin-Film Electronics , 2005 , I7.1
Copyright
Copyright © Materials Research Society 2005

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References

1 Dimitrakopoulos, C. D., Purushothaman, S., Kymissis, J., Callegari, A., Shaw, J. M., Science 283, 822 (1999).Google Scholar
2 Takeya, J., Goldmann, C., Haas, S., Pernstich, K. P., Ketterer, B., and Batlogg, B., J. Appl. Phys. 94, 5800 (2003).Google Scholar
3 Sze, S. M., Physics of Semiconductor Devices, 2nd ed., (Wiley, NewYork, 1981).Google Scholar
4 Podzorov, V., Pudalov, V. M., and Gershenson, M. E., Appl. Phys. Lett. 82, 1739 (2003); V. Podzorov, S. E. Syoev, E. Loginova, V. M. Pudalov, and M. E. Gershenson, Appl. Phys. Lett. 83, 3504 (2003); R. W. I. de Boer, T. M. Klapwijk, and A. F. Morpurgo, Appl. Phys. Lett. 83, 4345 (2003).Google Scholar
5 Takeya, J., Nishikawa, T., Takenobu, T., Kobayashi, S., Iwasa, Y., Mitani, T., Goldmann, C., Krellner, C., and Batlogg, B., Appl. Phys. Lett. 85, 5078 (2004).Google Scholar
6 Kobayashi, S., Nishikawa, T., Takenobu, T., Mori, S., Shimoda, T., Mitani, T., Shimotani, H., Yoshimoto, N., Ogawa, S., and Iwasa, Y., Nat. Mater. 3, 317 (2004).Google Scholar
7 Pope, M. and Swenberg, C., Electronic Processes in Organic Crystals and Polymers, 2nd ed. (Oxford University Press, Oxford, 1999).Google Scholar