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The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon

Published online by Cambridge University Press:  15 February 2011

M.J. Antonell ,
T.E. Haynes  and
K.S. Jones
M.J. Antonell
Affiliation:
University of Florida, Gainesville, FL 32611
T.E. Haynes
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
K.S. Jones
Affiliation:
University of Florida, Gainesville, FL 32611
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Abstract

Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Sio.88Ge0.12/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500- 700°C) has three main effects on SPER; these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front.1 Recrystallization of amorphized SiGe layers at higher temperatures (1 100°C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures threading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the threading dislocation density is slightly higher with carbon implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 453
Copyright
Copyright © Materials Research Society 1995

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References

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