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Effects of Si-doping on the Microstructure of AlGaN/GaN Multiple-quantum-well

Published online by Cambridge University Press:  01 February 2011

R. Liu ,
F. A. Ponce ,
S-L. Sahonta ,
D. Cherns ,
H. Amano  and
I. Akasaki
R. Liu
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
F. A. Ponce
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
S-L. Sahonta
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
D. Cherns
Affiliation:
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, UK
H. Amano
Affiliation:
Department of Materials Science and Engineering, Meijo University, Nagoya 468, Japan
I. Akasaki
Affiliation:
Department of Materials Science and Engineering, Meijo University, Nagoya 468, Japan
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Abstract

The effects of silicon-doping on the microstructure of Al0.07Ga0.93N/GaN multiple-quantum-well (MQW) have been studied by TEM. Significant changes of surface morphology and dislocation core structures have been observed due to Si-doping in the Al0.07Ga0.93N barriers. Threading dislocations create surface pits in the MQW as a result of Si doping. With an increasing doping level, the pits change the shape from small faceted pyramid to large cone. The formation mechanism of the surface pits has been discussed from both dynamics and kinetics points of view. We have also observed nanopipes constrict to form closed core screw dislocations in the MQW due to Si-doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.33
Copyright
Copyright © Materials Research Society 2004

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References

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