Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-15T06:46:04.049Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Silicon Implantation and Processing Temperature on Performance of Polycrystalline Silicon Thin-Film Transistors Fabricated from Low Pressure Chemical Vapor Deposited Amorphous Silicon

Published online by Cambridge University Press:  22 February 2011

Anne Chiang ,
Tiao Y. Huang ,
I-Wei Wu ,
Mark H. Zarzycki  and
Mario Fuse
Anne Chiang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Tiao Y. Huang
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
I-Wei Wu
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Mark H. Zarzycki
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Mario Fuse
Affiliation:
Fuji Xerox Co., Ltd., 2274 Hongo Ebina-Shi Kanagawa-Ken, 243–04 Japan
Get access

Abstract

Silicon implantation has been found to dramatically enhance the grain size of polysilicon crystallized from LPCVD a-Si by retarding the nucleation process at the substrate interface. Corresponding improvement in TFT device performance was also observed, resulting in field effect mobilities as high as 109 cm2/Vs in devices with 1000 Å thick Si active layer. This effect is more significant in device fabrication processes with higher temperature, possibly due to increasingly efficient removal of implant related defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 305
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morozumi, S., Araki, R., Ohshima, H., Atsuo, M., Nakazawa, T., and Sato, T. in Proceedings of the 6th International Display Research Conference, (The Society for Information Display, Playa del Rey, CA 1986) pp. 196–199.Google Scholar
2. Oana, Y., in 1984 SID International Symposium Digest of Technical Papers, (The Society for Information Display, Playa del Rey, CA 1984) pp. 312–315.Google Scholar
3. Morozumi, S., Kurihara, H., Takeshita, T., Oka, H., and Hasegawa, K., IEEE Trans. Elecron Dev. ED-32 (8), 1546–1550 (1985).Google Scholar
4. Kamins, T. I., IEEE Electron Dev. Lett. EDL-1 (8), 159–161 (1980).CrossRefGoogle Scholar
5. Kung, K. T.-Y., and Reif, R., in Semiconductor-on-Insulator and Thin Film Transistor Technology, edited by Chiang, A., Geis, M. W., and Pfeiffer, L., (Mater. Res. Soc. Proc. 53, Pittsburgh, PA 1985) pp. 163–168.Google Scholar
6. Iverson, R. B. and Reif, R., J. Appl. Phys. 57 (12), 5169–5175 (1985).Google Scholar
7. Ohshima, T., Noguchi, T., and Hayashi, H., Japan. J. Appl. Phys. 25 (4), L291–L293 (1986).Google Scholar
8. Noguchi, T., Hayashi, H., and Ohshima, T., Japan. J. Appl. Phys. 25 (2), L121–L123 (1986).Google Scholar
9. Harbeke, G., Krausbauer, L., Steigmeier, E. F., Widmer, A. E., Kappert, H. F., and Neugebauer, G., J. Electrochem. Soc. 131 (3), 675–682 (1984).Google Scholar
10. Hawkins, W. G., IEEE Trans. Electron Dev. ED-33 (4), 477–481 (1986).Google Scholar
11. Hatalis, M. K., and Greve, G. W., IEEE Electron Dev. Lett. EDL-8 (8), 361–364 (1987).Google Scholar
12. Chiang, A., Wu, G. Y., Ponce, F. A., and Nemanich, R. J. in Proceedings of the International Conference on Semiconductor and Integrated Circuit Technology, edited by Wang, X. and Mo, B. (World Scientific Publishing Co., Singapore 1986) pp. 321–323.Google Scholar
13. Bisaro, R., Magarino, J., Proust, N., and Zellama, K., J. AppI. Phys. 59(4), 1167–1178(1986).CrossRefGoogle Scholar
14. Kennedy, E. F., Csepregi, L., Meyer, J. W., and Sigmon, T. W., J. AppI. Phys., 48 (10), 4241–4246 (1977).Google Scholar
15. Rodder, M. and Antoniadis, D. A., IEEE Electron Dev. Lett. EDL-6 (11), 570–572 (1985).CrossRefGoogle Scholar
16. Madan, S. K., and Antoniadis, D. A., IEEE Trans. Electron Dev. ED-33 (10), 1518–1528 (1986).Google Scholar
17. Marcus, R. B., Sheng, T. T., and Lin, P., J. Electrochem. Soc. 129 (6), 1282–1289 (1982).Google Scholar
18. Kung, K. T.-Y., and Reif, R., J. Appl. Phys. 61 (4), 1638–1642 (1987).Google Scholar