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Electrical and structural properties of ultrathin polycrystalline and epitaxial TiN films grown by reactive dc magnetron sputtering

Published online by Cambridge University Press:  31 January 2011

Fridrik Magnus ,
Arni Sigurdur Ingason ,
Sveinn Olafsson  and
Jon Tomas Gudmundsson
Fridrik Magnus
Affiliation:
fridrikm@hi.is, University of Iceland, Science Institute, Reykjavik, Iceland
Arni Sigurdur Ingason
Affiliation:
asi@hi.is, University of Iceland, Science Institute, Reykjavik, Iceland
Sveinn Olafsson
Affiliation:
sveinol@raunvis.hi.is, University of Iceland, Science Institute, Reykjavik, Iceland
Jon Tomas Gudmundsson
Affiliation:
tumi@hi.istumi@raunvis.hi.is, Unviersity of Iceland, Science Institute, Dunhaga 3, Reykjavik, IS-107, Iceland, (354)-5254946, (354)-552-8911
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Abstract

Ultrathin TiN films were grown by reactive dc magnetron sputtering on amorphous SiO2 substrates and single-crystalline MgO substrates at 600°C. The resistance of the films was monitored in-situ during growth to determine the coalescence and continuity thicknesses. TiN films grown on SiO2 are polycrystalline and have coalescence and continuity thicknesses of 8 Å and 19 Å, respectively. TiN films grow epitaxially on the MgO substrates and the coalescence thickness is 2 Å and the thickness where the film becomes continuous cannot be resolved from the coalescence thickness. X-ray reflection measurements indicate a significantly higher density and lower roughness of the epitaxial TiN films.

Keywords

x-ray diffraction (XRD)electronic materialelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1156: Symposium D – Materials, Processes and Reliability for Advanced Interconnects for Micro-and Nanoelectronics–2009 , 2009 , 1156-D03-05
Copyright
Copyright © Materials Research Society 2009

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