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Electrical Characteristics of RF Sputtered ZnO/HfO2 Interfaces in Transparent Thin Film Transistors

Published online by Cambridge University Press:  24 June 2015

Prem Thapaliya ,
Wenchao Lu  and
Rashmi Jha
Prem Thapaliya
Affiliation:
Department of Electrical Engineering and Computer Science University of Toledo, OH 43606, U.S.A.
Wenchao Lu
Affiliation:
Department of Electrical Engineering and Computer Science University of Toledo, OH 43606, U.S.A.
Rashmi Jha
Affiliation:
Department of Electrical Engineering and Computer Science University of Toledo, OH 43606, U.S.A.
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Abstract

In this work, we have reported the interface characterization of rf sputtered ZnO/HfO2 in thin film transistor structure by dc current-voltage and admittance spectroscopy. The interface state density (Dit) of 1013 eV−1cm−2 was extracted from the Gp/ω vs ω plot was comparable to value obtained from the subthreshold behavior. The grain boundary trap density (NGB) of 9.12×1012 cm−2 was estimated using Levinson’s model. The interface state density distribution below the conduction band edge shows a decreasing trend with energy below the conduction band edge. We also studied the impact of introducing MgO interfacial layer between ZnO and HfO2 interface as an approach towards decreasing the interface state density.

Keywords

defectssputteringtransparent conductor
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1792: Symposium CC/FF – Defects and Materials Issues in Semiconductors―Relationship to Optoelectronic Properties and Device Reliability , 2015 , mrss15-2137545
Copyright
Copyright © Materials Research Society 2015 

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References

REFERENCES

Stutzmann, M., Sharp, I.D., Garrido, J.A., Appl. Phys. Lett. 99, 033503 (2011).Google Scholar
Chang, S, Song, Y., Lee, S., Lee, S. Y., and Ju, B. K., Appl. Phys. Lett. 92, 192104 (2008).CrossRefGoogle Scholar
Kang, A. Y., Lenahan, P. M., and Conley, J. F. Jr., Appl. Phys. Lett. 83, 3407 (2003).CrossRefGoogle Scholar
Chen, W.-Y., Jeng, J.-S., Chen, J.-S., ECS Solid State Lett. 1(5) (2012).Google Scholar
Siddiqui, J. J., Phillips, J. D., Leedy, K., and Bayraktaroglu, B., IEEE Electron Device Lett. 32,12 (2011).CrossRefGoogle Scholar
Carcia, P. F., McLean, R. S., and Reilly, M. H., Appl. Phys. Lett. 88, 123509 (2006).CrossRefGoogle Scholar
Martins, R., Barquinha, P., Ferreira, I., Pereira, L., Gonçalves, G., Fortunato, E., J. Appl. Phys. 101, 044505 (2007).CrossRefGoogle Scholar
Levinson, J., Shepherd, F. R., Scalnon, P. J., Westwod, W. D., Este, G., and Rider, M., J. Appl. Phys., 53, 1193 (1982).CrossRefGoogle Scholar
Nicollian, E. H. and Goetzberger, A., Microelectron. Reliab. 7, 164 (1968).Google Scholar
Lin, H. C., Brammertz, G., Martens, K., de Valicourt, G., Negre, L., Wang, W. E., Tsai, W., Meuris, M., and Heyns, M., Appl. Phys. Lett. 94, 153508 (2009).CrossRefGoogle Scholar
Chicot, G., Pernot, J., Santailler, J.L., Chevalier, C., Granier, C., Ferret, P., Ribeaud, A., Feuillet, G. and Muret, P., Phys. Status Solidi B, 251, 206 (2014).CrossRefGoogle Scholar