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Electrical Properties of Alkyl-Trichlorosilane Monolayers Grafted on Silicon Substrate

Published online by Cambridge University Press:  16 February 2011

Dominique Vuillaume  and
Francis Rondelez
Dominique Vuillaume
Affiliation:
Institut d'Electronique et de Microélectronique du Nord (IEMN), UMR 9929, C.N.R.S., Institut Supérieur d'Electronique du Nord (ISEN), 41 Boulevard Vauban, 59046 LILLE, France.
Francis Rondelez
Affiliation:
Laboratoire de Physico-chimie des Surfaces et Interfaces, URA 1379, C.N.R.S., Institut Curie, Section de Physique et Chimie, 11 rue Pierre et Marie Curie, 75231 PARIS, France.
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Abstract

We demonstrate that a single monolayer of alkyl-trichlorosilane Molecules, covalently grafted to the native oxide of a silicon substrate, allows to fabricate silicon based MIS (Metal-Insulator-Semiconductor) devices with excellent electrical properties. The thickness of the organic monolayer is in the range 1.5–2.8 nm, corresponding to long alkyl chains with 8 to 18 carbon atoms. We have fabricated MIS capacitors with a leakage current density as low as 10-8 A/cm2 at 6 MV/cm, high dielectric breakdown field (12 MV/cm), electrically active defect density lower than 1011 cm-2, and low field dc conductivity as low as 10-16–10-15 Scm-1. Thermal stability has been demonstrated up to 450 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 328: Symposium Q – Electrical, Optical, and Magnetic Properties of Organic Solid State Materials , 1993 , 203
Copyright
Copyright © Materials Research Society 1994

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References

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