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Electrical Transport in Ultrathin NdNiO3 Films

Published online by Cambridge University Press:  12 June 2012

Megan Campbell  and
Ashutosh Tiwari
Megan Campbell
Affiliation:
Nanostructured Materials Research Laboratory University of Utah, Department of Materials Science & Engineering
Ashutosh Tiwari*
Affiliation:
Nanostructured Materials Research Laboratory University of Utah, Department of Materials Science & Engineering
*
*E-mail: tiwari@eng.utah.edu
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Abstract

Electrical transport properties in ultrathin NdNiO3 films grown on single crystal LaAlO3(001) substrate were characterized. Films with thicknesses ranging from 0.6 nm to 12 nm were grown using a pulsed laser technique. Four probe resistivity as a function of temperature measurements indicated a strong dissipation of strain effects from 0.6 nm to 6 nm as well as the presence of defects in the 12 nm sample. A proposed mechanism of kinetically stable glassy phase formation explains the time dependence of the resistivity in both cooling and heating cycles.

Keywords

metal-insulator transitionthin filmelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1454: Symposium HH – Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems , 2012 , pp. 27 - 32
Copyright
Copyright © Materials Research Society 2012

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