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The Element Depth Profiles in Ultrathin Silicon Oxynitride Films

Published online by Cambridge University Press:  11 February 2011

Igor P. Asanov ,
Jinhak Choi ,
Youngsu Chung ,
Jaemin Choi  and
Jaecheol Lee
Igor P. Asanov
Affiliation:
Samsung Advanced Institute of Technology, Analytical Engineering Center, P.O. Box 111, Suwon 440–600, Korea
Jinhak Choi
Affiliation:
Samsung Advanced Institute of Technology, Analytical Engineering Center, P.O. Box 111, Suwon 440–600, Korea
Youngsu Chung
Affiliation:
Samsung Advanced Institute of Technology, Analytical Engineering Center, P.O. Box 111, Suwon 440–600, Korea
Jaemin Choi
Affiliation:
Samsung Advanced Institute of Technology, Analytical Engineering Center, P.O. Box 111, Suwon 440–600, Korea
Jaecheol Lee
Affiliation:
Samsung Advanced Institute of Technology, Analytical Engineering Center, P.O. Box 111, Suwon 440–600, Korea
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Abstract

Distribution of nitrogen in the thin silicon oxynitride films (less than 5 nm) obtained by plasma nitridation of SiO2 has been studied by non-destructive angular dependent XPS. For obtaining information about the element distribution in-depth the regularization technique has been applied. It is shown that the depth of nitrogen penetration increases with decreasing the SiO2 film thickness. In this case the maximum of the nitrogen distribution is enhanced and shifted to the Si-SiO2 interface. The results are compared with depth-profiling obtained by sputtering and wet chemical etching. The dependence of the binding energies on the film thickness has been studied. The influence of different factors on the chemical shift in the ultrathin films has been analyzed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G7.41
Copyright
Copyright © Materials Research Society 2003

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References

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