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Energy Dependence of Defects in a-Si:H Solar Cells During Degradation and Annealing Processes

Published online by Cambridge University Press:  15 February 2011

Domenico Caputo ,
Francesco Lemmi  and
Fabrizio Palma
Domenico Caputo
Affiliation:
Department of Electronic Engineering, via Eudossiana, 18 00184 Rome, (Italy)
Francesco Lemmi
Affiliation:
Department of Electronic Engineering, via Eudossiana, 18 00184 Rome, (Italy)
Fabrizio Palma
Affiliation:
Department of Electronic Engineering, via Eudossiana, 18 00184 Rome, (Italy)
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Abstract

In this work we report on the effect of current-induced degradation and annealing on p-i-n amorphous silicon solar cells. Current-voltage curves and capacitance measurements under forward bias have been used to monitor the current-induced changes as a function of time. We found that the recovery rate increases with the annealing current, while the stabilized value of efficiency decreases. Comparison of short circuit current and capacitance evolution suggests that defect kinetics in the electronic gap occurs in a different way during degradation and annealing. This behavior can be modeled assuming a faster annealing of defects closest to the extended band and a slower annealing of mid-gap defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 783
Copyright
Copyright © Materials Research Society 1997

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References

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