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Enhanced Cooling in Doped Semiconductors Due to Nonlinear Peltier Effect

Published online by Cambridge University Press:  01 February 2011

Mona Zebarjadi ,
Keivan Esfarjani  and
Ali Shakouri
Mona Zebarjadi
Affiliation:
mona@soe.ucsc.edu, University of California, Santa Cruz, Electrical Engineering, SOE Grads, UCSC, 1156 high st., Santa Cruz, CA, 95064, United States, 831-4591292
Keivan Esfarjani
Affiliation:
keivan@physics.ucsc.edu, University of California , Santa Cruz, Physics Department, 1156 High St., Santa Cruz, CA, 95064, United States
Ali Shakouri
Affiliation:
ali@soe.ucsc.edu, University of California , Santa Cruz, Electrical Engineering, 1156 High St., Santa Cruz, CA, 95064, United States
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Abstract

Thermoelectric coefficients become a function of the applied field and temperature gradient if the latter become large enough. So in analyzing device performance in this regime accurately, it is important to include the non-linear terms. Non-linearity is a consequence of electron heating. For low doping concentrations, nonlinearity can happen at low currents. We will show that at room temperature in InGaAs it starts at practical currents on the order of 105 A/cm2. At low temperatures the Peltier coefficient goes to zero. However, its nonlinear term does not change as much. Since the nonlinear heat current goes with the third power of current, there is a chance that in some cases it can overcome the joule heating. We will show that at T=77K the cooling power can be enhanced by a factor of seven compared to room temperature. Nonlinearity of the Seebeck coefficient becomes an important factor when high temperature gradients are applied on nanoscale samples, and can lead to enhanced power generation

Keywords

thermoelectricitysemiconductingnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1044: Symposium U – Thermoelectric Power Generation , 2007 , 1044-U10-04
Copyright
Copyright © Materials Research Society 2008

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