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Enhancement of luminescence quantum yield of 1.5 µm emission from Er-doped SiO2 sensitized with Si nanocrystals

Published online by Cambridge University Press:  13 February 2014

S. Saeed  and
T. Gregorkiewicz
S. Saeed
Affiliation:
Van der Waals – Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
T. Gregorkiewicz
Affiliation:
Van der Waals – Zeeman Institute, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
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Abstract

Excitation of multiple Er3+ ions upon absorption of a single high-energy photon increases Er-related emission at 1.5 μm, and therefore enhances UV/visible-to-IR photon conversion efficiency. Here we investigate this effect for layers of Er-doped SiO2 sensitized with silicon nanocrystals by measuring the quantum yield of 1.5 µm Er-related emission. We demonstrate dramatic increase of the emission commencing for excitation energies above a certain threshold value, as the number of Er3+ ions excited upon absorption of a single incoming photon increases. By comparing differently prepared materials, we show that the actual value of this threshold energy and the rate of the observed increase of the quantum yield depend on sample characteristics – the size of Si nanocrystals and the ratio of Er3+ ions and nanocrystals concentrations.

Keywords

Ernanoscaleluminescence
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1592: Symposium I – Rare Earth Doped Advanced Materials for Photonic Applications , 2014 , jsapmrs13-1592-6221
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Wegh, R. T., Donker, H., Oskam, K. D., and Meijerink, A., Science 283, 663 (1999).CrossRefGoogle Scholar
Vergeer, P., Vlugt, T. J. H., Kox, M. H. F., den Hertog, M. I., van der Eerden, J. P. J. M., and Meijerink, A., Phys. Rev. B 71 014119 (2005)CrossRefGoogle Scholar
Richards, B. S., Sol. Energy Mater. & Sol. Cells 90, 1189 (2006).CrossRefGoogle Scholar
Lee, T-J., Luo, L-Y., Diau, E. W-G., Chen, T-M., Cheng, B-M., and Tung, C-Y., Appl. Phys. Lett. 89, 131121 (2006).CrossRefGoogle Scholar
Ye, S., Zhu, B., Luo, J., Chen, J., Lakshminarayana, G., and Qiu, J., Opt. Express 16, 8989 (2008).CrossRefGoogle Scholar
Miritello, M., Salvio, R. Lo, Cardile, P., and Priolo, F., Phys. Rev. B 81, 041411(R) (2010).CrossRefGoogle Scholar
Kenyon, A. J., Semicond. Sci. Technol. 20, R65 (2005).CrossRefGoogle Scholar
Forcales, M., Gregorkiewicz, T., Bradley, I. V. and Wells, J-P. R., Phys. Rev. B 65, 195208 (2002).CrossRefGoogle Scholar
Vinh, N. Q., Ha, N. N., and Gregorkiewicz, T., Proc. IEEE 79, 1269 (2007).Google Scholar
Polman, A., J. Appl. Phys. 82, 1 (1997)CrossRefGoogle Scholar
Fujii, M., Imakita, K., Watanabe, K., and Hayashi, S., J. Appl. Phys. 95, 272 (2004).CrossRefGoogle Scholar
Savchyn, O., Todi, R. M., Coffey, K. R., and Kik, P. G., Appl. Phys. Lett. 94, 241115 (2009).CrossRefGoogle Scholar
Izeddin, I., Moskalenko, A. S., Yassievich, I. N., Fujii, M., and Gregorkiewicz, T., Phys. Rev. Lett. 97, 207401 (2006).CrossRefGoogle Scholar
Izeddin, I., Timmerman, D., Gregorkiewicz, T., Moskalenko, A. S., Prokofiev, A. A., Yassievich, I. N., and Fujii, M., Phys. Rev. B 78, 035327 (2008).CrossRefGoogle Scholar
Choueiry, A. Al, Jurdyc, A. M., Jacquier, B., Gourbilleau, F., and Rizk, R., J. Appl. Phys. 106, 053107 (2009).CrossRefGoogle Scholar
Saeed, S., Timmerman, D., and Gregorkiewicz, T., Phys. Rev. B 83, 155323 (2011).CrossRefGoogle Scholar
Timmerman, D., Valenta, J., Dohnalova, K., de Boer, W. D. A. M., and Gregorkiewicz, T., Nat. Nanotechnol. 6, 710 (2011).CrossRefGoogle Scholar
Timmerman, D., Izeddin, I., Stallinga, P., Yassievich, I. N., and Gregorkiewicz, T., Nature Photon. 2, 105 (2008)CrossRefGoogle Scholar
Timmerman, D., and Gregorkiewicz, T., Mat. Sci. & Eng. B 159–160, 87 (2009).CrossRefGoogle Scholar
Fujii, M., Yoshida, M., Kanzawa, Y., Hayashi, S., and Yamamoto, K., Appl. Phys. Lett. 71, 1198 (1997).CrossRefGoogle Scholar