Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-13T05:59:03.501Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties

Published online by Cambridge University Press:  01 February 2011

Tomohiro Yamaguchi ,
Kathrin Sebald ,
Juergen Gutowski ,
Stephan Figge  and
Detlef Hommel
Tomohiro Yamaguchi
Affiliation:
yamaguchi@ifp.uni-bremen.de, University of Bremen, Otto-Hahn-Allee NW1 M4090, Bremen, Bremen, 28359, Germany, ++49-421-218-7453, ++49-421-218-4581
Kathrin Sebald
Affiliation:
ksebald@ifp.uni-bremen.de
Juergen Gutowski
Affiliation:
gutowski@ifp.uni-bremen.de
Stephan Figge
Affiliation:
figge@ifp.uni-bremen.de
Detlef Hommel
Affiliation:
hommel@ifp.uni-bremen.de
Get access

Abstract

The surface morphology of thin InxGa1-xN layers in uncapped structures and the overgrowth using GaN or InxGa1-xN with a lower In content than the InxGa1-xN layer as the protection layer of the InxGa1-xN layer were investigated in addition to their dependence on growth temperature during the growth by metalorganic vapor phase epitaxy (MOVPE). It was necessary to decrease the growth temperature of the InxGa1-xN layer in order to realize homogeneous dots. In order to obtain a high luminescence efficiency, on the other hand, it was essential to increase the growth temperature of the protection layer. Sharp lines related to the localized electronic states, which are attributed to InGaN quantum dots, were observed by micro-photoluminescence (μ-PL) for the samples with the InxGa1-xN layers protected by the InxGa1-xN layers grown at 700∼740°C.

Keywords

nitridechemical vapor deposition (CVD) (deposition)nanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF11-01
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Arakawa, Y., phys. stat. sol. (a) 188, 37 (2001).3.0.CO;2-Q>CrossRef3.0.CO;2-Q>Google Scholar
2. Damilano, B., Grandjean, N., Dalmasso, S. and Massies, J., Appl. Phys. Lett. 75, 3751 (1999).CrossRefGoogle Scholar
3. Adelmann, C., Simon, J., Feuillet, G., Pelekanos, N. T. and Daudin, B., Appl. Phys. Lett. 76, 1570 (2000).CrossRefGoogle Scholar
4. Kobayashi, Y., Perez-Solorzano, V., Off, J., Kuhn, B., Gräbeldinger, H., Schweizer, H. and Scholz, F., J. Cryst. Growth 243, 103 (2002).CrossRefGoogle Scholar
5. Hirayama, H., Tanaka, S., Ramvall, P. and Aoyagi, Y., Appl. Phys. Lett. 72, 1736 (1998).CrossRefGoogle Scholar
6. Oliver, R. A., Briggs, G. A. D., Kappers, M. J., Humphreys, C. J., Yasin, S., Rice, J. H., Smith, J. D. and Taylor, R. A., Appl. Phys. Lett. 83, 755 (2003).CrossRefGoogle Scholar
7. Hesse, H., Stangl, J., Holý, V., Bauer, G., Kirfel, O., Müller, E. and Grützmacher, D., Mater. Sci. Eng. B 101, 71 (2003).CrossRefGoogle Scholar
8. Joyce, P. B., Krzyzewski, T. J., Bell, G. R. and Jones, T. S., Appl. Phys. Lett. 79, 3615 (2001).CrossRefGoogle Scholar
9. Pretorius, A., Yamaguchi, T., Kübel, C., Kröger, R., Hommel, D. and Rosenauer, A., Submitted to phys. stat. sol. Google Scholar
10. Pretorius, A., Yamaguchi, T., Schowalter, M., Kröger, R., Kübel, C., Hommel, D. and Rosenauer, A., To be published in Inst. Phys. Conf. Ser. Google Scholar
11. Yamaguchi, T. et al. , in preparation.Google Scholar
12. Yamaguchi, T., Einfeldt, S., Gangopadhyay, S., Pretorius, A., Rosenauer, A., Falta, J. and Hommel, D., Submitted to Phys. Status Solidi.Google Scholar
13. Joyce, P. B., Krzyzewski, T. J., Bell, G. R., Jones, T. S., Ru, E. C. L. and Murray, R., Phys. Rev. B 64, 235317 (2001).CrossRefGoogle Scholar
14. Tachibana, K., Someya, T. and Arakawa, Y., Appl. Phys. Lett. 74, 383 (1999).CrossRefGoogle Scholar
15. Pretorius, A., Yamaguchi, T., Kübel, C., Kröger, R., Hommel, D. and Rosenauer, A., Submitted to phys. stat. sol. Google Scholar
16. Besombes, L., Kheng, K., Marsal, L. and Mariette, H., Phys. Rev. B 63, 155307 (2001).Google Scholar
17. Sebald, K., Michler, P., Passow, T., Hommel, D., Bacher, G. and Forchel, A., Appl. Phys. Lett. 81, 2920 (2002).CrossRefGoogle Scholar
18. Moriwaki, O., Someya, T., Tachibana, T., Ishida, S. and Arakawa, Y., Appl. Phys. Lett. 76, 2361 (2000).CrossRefGoogle Scholar
19. Seguin, R., Rodt, S., Strittmatter, A., Reimann, L., Bartel, T., Hoffmann, A., Bimberg, D., Hahn, E. and Gerthsen, D., Appl. Phys. Lett. 84, 4023 (2004).Google Scholar
20. Schmig, H., Halm, S., Forchel, A. and Bacher, G., Phys. Rev. Lett. 92, 106802 (2004).Google Scholar
21. Sebald, K., Lohmeyer, H., Gutowski, J., Yamaguchi, T. and Hommel, D., Submitted to phys. stat. sol. Google Scholar