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Epitaxial Film Growth of Single Crystal Ce/V Prepared by Molecular-Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

Hitoshi Homma ,
Kai-Y. Yang  and
Ivan K. Schuller
Hitoshi Homma
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Kai-Y. Yang
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Ivan K. Schuller
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

The growth of epitaxial films of cerium (Ce)/vanadium (V)/on single crystal sapphires (α-A1203) was studied by in-situ reflection high energy electron diffraction and x-ray scattering. For the first time Ce(111) single crystal film was grown on V(110)/α-A12O3 (1120) in the Frank-van der Merwe mode. A new epitaxial orientation, different from the well known Nishiyama-Wasserman or Kurdjumov-Sachs orientations is found in the present study. Subsequent V(110) layers grow epitaxially with three equivalent domains.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 557
Copyright
Copyright © Materials Research Society 1987

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References

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