Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-29T10:48:10.290Z Has data issue: false hasContentIssue false
  • English
  • Français

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

Published online by Cambridge University Press:  01 February 2011

Tomohiko Takeuchi ,
Suzuka Nishimura ,
Tomoyuki Sakuma ,
Satoru Matumoto  and
Kazutaka Terashima
Tomohiko Takeuchi
Affiliation:
zh9t-tkuc@asahi-net.or.jp, Keio University, Department of Electronics and Electrical Engineering, 3-14-1 Hiyoshi, Kohoku, Yokohama-Ciry, N/A, 223-8522, Japan
Suzuka Nishimura
Affiliation:
toraka0623@yahoo.co.jp, Shonan Institute of Technology, Materials Science and Technology, Japan
Tomoyuki Sakuma
Affiliation:
s-sakuma@msd.biglobe.ne.jp, Keio University, Department of Electronics and Electrical Engineering, Japan
Satoru Matumoto
Affiliation:
matumoto@elec.keio.ac.jp, Keio University, Department of Electronics and Electrical Engineering, Japan
Kazutaka Terashima
Affiliation:
terasima@mate.shonan-it.ac.jp, Shonan Institute of Technology, Materials Science and Technology, Japan
Get access

Abstract

Boronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Keywords

crystal growthchemical vapor deposition (CVD) (deposition)III-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-14
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Egawa, T., Zhang, B., Nishikawa, N., Ishikawa, H., Jimbo, T. and Umeno, M., J. Appl. Phys. 91, 528(2002).Google Scholar
2. Yoshida, S., Li, J., Takehara, H. and Wada, T., J. Cryst. Growth 253, 85(2003).Google Scholar
3. Tsuchiya, H., Takeuchi, A., Kurihara, M. and Hasegawa, F., J. Cryst. Growth 152, 21 (1995).Google Scholar
4. Lei, T., Fancil, M., Molnar, R.J., Moustakas, T.D., Graham, R.J. and Scanlon, J., Appl. Phys. Lett. 59, 944 (1991).Google Scholar
5. Okumura, H., Misawa, S., Okahisa, T. and Yoshida, S., J. Cryst. Growth 136, 361 (1994).Google Scholar
6. Das, P. and Ferry, D. F., Solid State Electron. 19, 851 (1976).Google Scholar
7. Okumura, H., Ohta, K., Feuillet, G., Balakrishnan, K., Chichibu, S., Hamaguchi, H., Hacke, P. and Yoshida, S., Cryst, J.. Growth 178, 113 (1997).Google Scholar
8. Nishimura, S., Matsumoto, S. and Terashima, K., Opt. Mater. 19, 223(2002).Google Scholar
9. Nishimura, S., Hanamoto, H., Matsumoto, S. and Terashima, K., Mater. Sci. Eng. B 93, 135 (2002).Google Scholar
10. Stone, B. and Hill, D., Phys. Rev. Letters 4, 282(1964).Google Scholar
11. Kato, N., Kammura, W., Iwami, M. and Kawabe, K., Jpn. J. Appl. Phys. 16, 1623 (1977).Google Scholar