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Evaluation of Silicon Photodiode as X and Gamma-Ray Detector at Room Temperature

Published online by Cambridge University Press:  21 February 2011

V. Cimpoca
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
G.H. Caragheorgheopol
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
D. Lazarovici
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
C. Lazarovici
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
R. Ruscu
Affiliation:
Institute for Atomic Physics, Bucharest 76900, P.O.Box MG-6, Romania
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Abstract

A silicon photodiode 10 sqmm area designed for 0,45 A/W and maximum sensitivity at 900 μm, was tested as X and gamma-ray detector in the 6-122 keV range. The simple structure, good manufacturing and passivating for a NIP photodiode (6 KΩcm,p- type material) gives a yield of 20% from batch with suitable characteristics for low energy X and gamma-ray detection. A cheap nuclear detector for technical measurements results. Evaluation and analysis of parameters in X and gamma detection is made for these silicon structures; they are mounted on TO-8 holders without entrance lenses. The applications proposed namely the composition test of alloys (with known matrix) by X-ray fluorescence analysis and in radiation safety field (absorbed dose survey), ex. in radiological clinics defectoscopic laboratories or in front of video displays.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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