Published online by Cambridge University Press: 21 February 2011
A silicon photodiode 10 sqmm area designed for 0,45 A/W and maximum sensitivity at 900 μm, was tested as X and gamma-ray detector in the 6-122 keV range. The simple structure, good manufacturing and passivating for a NIP photodiode (6 KΩcm,p- type material) gives a yield of 20% from batch with suitable characteristics for low energy X and gamma-ray detection. A cheap nuclear detector for technical measurements results. Evaluation and analysis of parameters in X and gamma detection is made for these silicon structures; they are mounted on TO-8 holders without entrance lenses. The applications proposed namely the composition test of alloys (with known matrix) by X-ray fluorescence analysis and in radiation safety field (absorbed dose survey), ex. in radiological clinics defectoscopic laboratories or in front of video displays.