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Excess Carrier Lifetimes in (HgCd)Te Grown by Mocvd Interdiftused Multilayer Process

Published online by Cambridge University Press:  21 February 2011

P. Mitra ,
T. R. Schimert ,
Y. L. Tyan ,
A. J. Brouns  and
F. C. Case
P. Mitra
Affiliation:
Loral Vought Systems Corp., P. O. Box 650003, Dallas, TX 75265
T. R. Schimert
Affiliation:
Loral Vought Systems Corp., P. O. Box 650003, Dallas, TX 75265
Y. L. Tyan
Affiliation:
Loral Vought Systems Corp., P. O. Box 650003, Dallas, TX 75265
A. J. Brouns
Affiliation:
Loral Vought Systems Corp., P. O. Box 650003, Dallas, TX 75265
F. C. Case
Affiliation:
Loral Vought Systems Corp., P. O. Box 650003, Dallas, TX 75265
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Abstract

Transient lifetime measurements on p- and n-type Hg1-xCdxTe epitaxial films, grown by the MOCVD-interdiffused multilayer process (IMP) on CdTe and CdZnTe, are reported. Lifetimes have been measured on undoped n-type, vacancy and arsenic doped p-type (HgCd)Te for x-values of 0.20-0.28 over the 25K-300K temperature range. Lifetime characterization has been carried out primarily by non-contact transient millimeter wave reflectance as well as by standard photoconductive decay. It is shown that Auger limited lifetimes are achievable in undoped n-type material. N-type lifetime results are analyzed within the framework of a multilevel Shockley-Read model which provide insight into the nature and density of defect states in the material. In p-type (HgCd)Te, for the same carrier concentration, longer lifetimes are obtained by As-doping than in vacancy doped material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 403
Copyright
Copyright © Materials Research Society 1993

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References

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