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Experimental Study of Sputter Deposited Contacts to Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

E. C. Piquette ,
Z. Z. Bandić  and
T. C. McGill
E. C. Piquette
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
Z. Z. Bandić
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
T. C. McGill
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
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Abstract

A variety of metal contacts to n-GaN is investigated, including Al, Au, Ce, Ti, Cr, Mg, Sb, W, and Mo, which were deposited using DC magnetron plasma sputtering onto MBE grown GaN. The contacts were characterized by current-voltage analysis and contact resistances were measured by the circular geometry transmission line method. The effects on contact resistance and Schottky barrier properties by surface sputtering treatments, GaN doping, and post-deposition annealing are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1089
Copyright
Copyright © Materials Research Society 1998

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References

[1] Lester, L. F., Brown, J. M., Ramer, J. C., Zhang, L., Hersee, S. D. and Zolper, J. C., Appl. Phys. Lett. 69, 2737 (1996).Google Scholar
[2] Fan, Z., Mohammad, S. N.. Kim, W., Aktas, Ö., Botchkarev, A. E., Suzue, K., Morkog, H., Duxstad, K. and Haller, E. E., J. Electron. Mater. 25, 1703 (1996).Google Scholar
[3] Burm, J., Chu, K., Davis, W. A., Schaff, W. J., Eastman, L. F. and Eustis, T. J., Appl. Phys. Lett. 70, 464 (1997).Google Scholar
[4] Nakamura, S., Senoh, M., Nagahama, S., Iwara, M., Yamada, T., Marsushita, T., Kiyoku, H. and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L74 (1996).Google Scholar
[5] Luther, B. P., Mohney, S. E., Jackson, T. N., Khan, M. Asif, Chen, Q. and Yang, J. W., Appl. Phys. Lett 70, 57 (1997).Google Scholar
[6] Lin, M. E., Ma, Z., Huang, F. Y., Fan, Z. F., Allen, L. H. and Morkog, H., Appl. Phys. Lett. 64, 1003 (1994).Google Scholar
[7] Marlow, G. S. and Das, M. B., Solid-State Electron. 25(2), 91 (1982).Google Scholar
[8] Reeves, G. K., Solid-State Electron. 23, 487 (1980).Google Scholar
[9] Chan, J. S., Cheung, N. W., Schloss, L., Jones, E., Wong, W. S., Newman, N., Liu, X., Weber, E. R., Gassman, A. and Rubin, M. D., Appl. Phys. Lett. 68 2702 (1996).Google Scholar
[10] Ishikawa, H., Kobayashi, S., Koide, Y., Yamasaki, S., Nagai, S., Umezaki, J., Koike, M. and Murakami, M., J. Appl. Phys. 81 (3), 1315 (1997).Google Scholar