Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-15T08:39:05.278Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Characterization of 5 kV IGBTs on 4H-SiC

Published online by Cambridge University Press:  01 February 2011

Charlotte Elizabeth Jonas ,
Qingchun Zhang ,
Sei-Hyung Ryu ,
Anant Agarwal  and
John Palmour
Charlotte Elizabeth Jonas
Affiliation:
charlotte_jonas@cree.com, Cree, Inc., Power, 4600 Silicon Dr., Durham, NC, 27703, United States
Qingchun Zhang
Affiliation:
jon_zhang@creee.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Sei-Hyung Ryu
Affiliation:
sei-hyung_ryu@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Anant Agarwal
Affiliation:
anant_agarwal@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
John Palmour
Affiliation:
john_palmour@cree.com, Cree, Inc., 4600 Silicon Dr., Durham, NC, 27703, United States
Get access

Abstract

P-channel planar IGBT devices were made on 4H-SiC. Punch-through buffer and drift layers were designed to block 5 kV were grown on 4H-SiC n-type substrate. Ion implantion was used for all selective doping such as n-well, p+, n+, JFET region and terminations. Gate oxidation was thermally grown and annealed. Blocking voltage of 5.7 kV was demonstrated. IGBTs exhibit VTH of -12 V, VT = -3.1 V, Rdiff,on = 400 mΩcm2 at Vg = -34 V at room temperature. Ron decreased to 108 mΩcm2 at Vg = -30 V at 300°C.

Keywords

devicesion-implantationoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-05
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Agarwal, Anant, Das, Mrinal, Krishnaswami, Sumithra, Palmour, John, Richmond, James, and Ryu, Sei-Hyung, “SiC Power Devices - An Overview,” Mat. Res. Soc. Symp. Proc. Vol. 815, pp. 243–254, (2004) Materials research Society Symposium, San Francisco, California, U. S. A., April 14-15, 2004.Google Scholar
2 Zhang, Q., Ryu, S., Jonas, C., Agarwal, A., and Palmour, J., “Simulations of 10kV Trench Gate IGBTs on 4H-SiC', Presented at ICSRM'05, September 2005, Pennsylvania, USA.Google Scholar
3 Das, M. K., “Recent Advances in (0001) 4H-SiC MOS Device Technology,” Materials Science Forum Vols. 457–460 (2004), pp. 1275–1280 Google Scholar
4 Das, M., Haney, S., S, Ryu, and Zhang, Q., “Improvement of Hole Channel Mobility in PIGBT on 4H-SiC” to be Presented at EMC'06, San Francisco, USA.Google Scholar