Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-29T14:38:40.215Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and Characterization of Copper Oxide Resistive Memory Devices

Published online by Cambridge University Press:  29 June 2011

S.M. Bishop ,
B.D. Briggs ,
Z.P. Rice ,
S. Addepalli ,
N.R. McDonald  and
N.C. Cady
S.M. Bishop
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
B.D. Briggs
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
Z.P. Rice
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
S. Addepalli
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
N.R. McDonald
Affiliation:
Air Force Research Laboratory/RITC, Rome, NY 13441, USA
N.C. Cady
Affiliation:
University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, NY 12203, U.S.A
Get access

Abstract

Three synthesis techniques have been explored as routes to produce copper oxide for use in resistive memory devices (RMDs). The major results and their impact on device current-voltage characteristics are summarized. The majority of the devices fabricated from thermally oxidized copper exhibited a diode-like behavior independent of the top electrode. When these devices were etched to form mesa structures, bipolar switching was observed with set voltages <2.5 V, reset voltages <(-1) V and ROFF/RON ∼103-104. Bipolar switching behavior was also observed for devices fabricated from copper oxide synthesized by RT plasma oxidation (ROFF/RON up to 108). Voiding at the copper-copper oxide interface occurred in films produced by thermal and plasma oxidation performed at ≥200°C. The copper oxide synthesized by reactive sputtering had large areas of open volume in the microstructure; this resulted in short circuited devices because of electrical contact between the bottom and top electrodes. The results for fabricating copper oxide into ≤100 nm features are also discussed.

Keywords

memoryoxidedevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q07-04
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lv, H.B., Yin, M., Fu, X.F., Song, Y.L., Tang, L., Zhou, P., Zhao, C.H., Tang, T.A., Chen, B.A., and Lin, Y.Y., IEEE. Elect. Dev. Lett. 29, 47 (2008).Google Scholar
2. Dong, R., Lee, D.S., Xiang, W.F., Oh, S.J., Seong, D.J., Heo, S.H., Choi, H.J., Kwon, M.J., Seo, S.N., Pyun, M.B., Hassan, M., and Hwang, H., Appl. Phys. Lett. 90, 042107 (2007).Google Scholar
3. Chen, A., Haddad, S., Wu, Y.C., Fang, T.N., Kaza, S., and Lan, Z., Appl. Phys. Lett. 92, 013503 (2008).Google Scholar
4. Zhu, Y., Mimura, K., and Isshiki, M., Oxid. Met. 61, 293 (2004).Google Scholar
5. CRC Handbook of Metal Etchants, edited by Walker, P. and Tarn, W.H. (CRC Press LLC, 1991), p. 348.Google Scholar
6. Takano, F., Shima, H., Muramatsu, H., Kokaze, Y., Nishioka, Y., Suu, K., Kishi, H., Arboleda, N.B. Jr., David, M., Roman, T., Kasai, H., and Arkinaga, H., Jap. J. Appl. Phys. 47, 6931 (2008).Google Scholar