Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-14T17:20:14.131Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si0.35Ge0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing

Published online by Cambridge University Press:  01 February 2011

Grace Huiqi Wang ,
Eng-Huat Toh ,
Chih-Hang Tung ,
Yong-Lim Foo ,
S. Tripathy ,
Guo-Qiang Lo ,
Ganesh Samudra  and
Yee-Chia Yeo
Grace Huiqi Wang
Affiliation:
g0404219@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, Silicon Nano Device Lab Engineering drive 3, Singapore, 459441, Singapore
Eng-Huat Toh
Affiliation:
g0402602@nus.edu.sg, National University of Singapore, Singapore, 459441, Singapore
Chih-Hang Tung
Affiliation:
g0404219@nus.edu.sg, Institutue of Microelectronics, Singapaore, 117685, Singapore
Yong-Lim Foo
Affiliation:
g0404219@nus.edu.sg, Institute of Materials Research & Engineering, Singapaore, 117602, Singapore
S. Tripathy
Affiliation:
g0404219@nus.edu.sg, Institute of Materials Research & Engineering, Singapaore, 117602, Singapore
Guo-Qiang Lo
Affiliation:
g0404219@nus.edu.sg, Institutue of Microelectronics, Singapaore, 117685, Singapore
Ganesh Samudra
Affiliation:
eleshanr@nus.edu.sg, National University of Singapore, Singapore, 459441, Singapore
Yee-Chia Yeo
Affiliation:
eleyeoyc@nus.edu.sg, National University of Singapore, Singapore, 459441, Singapore
Get access

Abstract

A novel scheme for the fabrication of SiGe-on-insulator (SGOI) substrates comprising a thin and relaxed silicon-germanium (SiGe) layer with high Ge mole fraction is reported.A cyclical thermal oxidation and annealing (CTOA) process is introduced to alleviate issues associated with surface roughening and non-uniformity in Ge content.A systematic study of the stress developed in the SiGe layer as condensation takes place is presented.A clear understanding of the strain evolution enables the SGOI substrate fabrication to be tailored according to the requirements of strain engineering in high mobility MOSFETs.

Keywords

Geepitaxyoxidation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F09-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shang, H., Schmidt, H. O., Chan, K. K., Copel, M., Ott, J. A., Kozlowski, P. M., Steen, S. E., Cordes, S. A., Wong, H.-S. P., Jones, E. C. and Haensch, W. E., Technical Dig. International Electron Device Meeting, Dec. 2002, Washington DC, pp. 441–444.Google Scholar
2. Wang, H. C.-H, Chen, S.-J., Wang, M.-F., Tsai, P.-Y.; Tsai, C. –W.; Wang, T.-W., Ting, S.M., Hou, T.-H., Lim, P.-S., Lin, H.-J., Jin, Y., Tao, H.-J., Chen, S.-C., Diaz, C.H., Liang, M. –S., Hu, C., Technical Dig. International Electron Device Meeting, Dec. 2002, Washington DC, pp. 161–164.Google Scholar
3. Dorner, P., Gust, W., Predel, B., Roll, U., Lodding, A., and Odelius, H., Philos.Mag.A, 49, 557 (1984).Google Scholar
4. Wang, G. H., Toh, E. H., Lim, Y. L., Tung, C.-H., Choy, S.-F., Samudra, G., and Yeo, Y.-C.: Applied. Physics Letters., vol. 89, no.5, pp.3109–3111, 2006.Google Scholar
5. Mizuno, T., Sugiyama, N., Tezuka, T., Numata, T. and Takagi, S., IEEE Trans. Electron Devices 50, 988 (2003)Google Scholar
6. Tezuka, T., Nakaharai, S., Moriyama, Y., Sujiyama, N. and Takagi, S., Symp. VLSI Tech. Dig. Technical Papers 2004, 7803 (2004).Google Scholar