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Femtosecond Laser-induced Crystallization in As-deposited Ge1Sb2Te4 Films

Published online by Cambridge University Press:  01 February 2011

Qin F. Wang ,
Lu P. Shi ,
Su M. Huang ,
Xiang S. Miao ,
Kai P. Wong  and
Tow C. Chong
Qin F. Wang
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
Lu P. Shi
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
Su M. Huang
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
Xiang S. Miao
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
Kai P. Wong
Affiliation:
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
Tow C. Chong
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Abstract

Time resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge1Sb2Te4 films. With an average fluence of 24mJ/cm2 a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 803: Symposia GG/HH – Advanced Characterization Techniques for Data Storage Materials – Phase Change and Nonmagnetic Materials for Data Storage , 2003 , HH5.7
Copyright
Copyright © Materials Research Society 2004

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References

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