Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-13T14:25:25.232Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric Behavior of Li-Doped ZnO Thin Films on Si(100) by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

M. Joseph ,
H. Tabata  and
T. Tkawai
M. Joseph
Affiliation:
Institute for Scientific and Industrial Research, Osaka university, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan
H. Tabata
Affiliation:
Institute for Scientific and Industrial Research, Osaka university, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan
T. Tkawai
Affiliation:
Institute for Scientific and Industrial Research, Osaka university, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan
Get access

Abstract

Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17 and 0.3 have been prepared on Si(100) substrate for the first time by pulsed laser deposition. These films are characterized for their structural, surface morphology and ferroelectric nature. A memory window of 1.2V has been observed in capacitance-voltage measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 517
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Islam, Q.T., Bunker, B.A., Phys. Rev. Lett. 59, 2701 (1987).Google Scholar
2. Weil, R., Nkum, R., Muranevich, E. and Benguigui, L., Phys. Rev. Lett. 62, 2744 (1989).Google Scholar
3. Onodera, A., Tamaki, N., Kawamura, Y., Sawada, T. and Yamashita, H., Jpn. J. Appl. Phys. 35, 5160 (1996).Google Scholar
4. Onodera, A., Tamaki, N., Jin, K. and Yamashita, H., Jpn. J. Appl. Phys 36, 6008 (1997).Google Scholar
5. Kasuga, M. and Mochizuki, M., J.Cryst. Growth, 54, 185 (1981).Google Scholar
6. Narasimhan, K.L., Pai, S.P., Palkar, V.R. and Pinto, R., Thin Solid Films 295, 104 (1997).Google Scholar
7. Hayamizu, S., Tabata, H., Tanaka, H. and Kawai, T., J.Appl. Phys. 80, 787 (1996).Google Scholar
8. Goto, S., Fujimura, N., Nishihara, T. and Ito, T., J.Cryst. Growth, 115, 816 (1991).Google Scholar
9. Yoon, K.H., Choi, J.W. and Lee, D.H., Thin Solid Films, 302, 116 (1997).Google Scholar
10. Hastie, J.W. and Joseph, M. (unpublished).Google Scholar
11. Joseph, M., Tabata, H. and Kawai, T., Extended Abstracts No.2, p.469, 18a-G-7, (59th Autumn Meeting; The Japan Society of Applied Physics (1998).Google Scholar