Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-10T22:05:42.743Z Has data issue: false hasContentIssue false
  • English
  • Français

Ferroelectric Properties of La-doped Bi4Ti3O12 Thin Films deposited directly on Si by pulse-injection MOCVD

Published online by Cambridge University Press:  21 March 2011

Joon Hyeong Kim ,
Jin Young Kim  and
Hyeong Joon Kim
Joon Hyeong Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Jin Young Kim
Affiliation:
Inter-University Semiconductor Research Center, Seoul National Univ., Seoul 151-742, Korea
Hyeong Joon Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Get access

Abstract

(Bi,La)4Ti3O12(BLT) thin films were prepared on Si(100) substrates by the pulse injection metalorganic chemical vapor deposition (MOCVD) process, in which Ti and La precursors were injected with periodic pauses while Bi precursor was supplied continuously. In case of the pulse injection method, the film composition was relatively uniform and the Bi content at the interface was relatively uniform and the Bi content at the interface was increased. The BLT films, which were deposited by the pulse injection MOCVD, showed better crystallinity and thinner ionterfacial amorphous layer than the continuous BLT films. The continuous BLT films, although measured at 1 MHz showed similar C-V characteristics to those measured at low frequency region, and their flatband voltages also shifted severely to the negative voltage direction. On the other hand, the pulse BLT films exhibited clockwise ferroelectric hysteresis in the C-V curves. The memory window and the leakage current density were about 2V and 1.46×10−7 A/cm2 at 9V (180 kV/cm), respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC3.7.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Han, Jin-Ping and Ma, T. P., Appl. Phys. Lett. 72, 1185 (1998).Google Scholar
2. Wu, S. Y., IEEE Trans. Electron Devices 21, 499 (1974); T. Kijima and H. Matsunaga, Jpn. J. Appl. Phys. 38, 2281 (1999).Google Scholar
3. Peng, C. H. and Desu, S. B., J. Am. Ceram. Soc. 77, 1799(1994).Google Scholar
4. Melnick, B. M., Gregory, J., and Araujo, C. A. Paz-de, Integr. Ferroelectr. 11, 145(1995).Google Scholar
5. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Nature 401, 682(1999).Google Scholar
6. Kim, Y. T. and Kim, H. K., Appl. Phys. Lett. 71, 3507(1997).10.1063/1.120374Google Scholar
7. Basit, N. A. and Kim, H. K., Appl. Phys. Lett. 73, 3941 (1998).10.1063/1.122943Google Scholar
8. Lee, H. N., Lim, M. H., Kim, Y. T., Kalkur, T. S., and Choh, S. H., Jpn. J. Appl. Phys. 37, 1107 (1998).10.1143/JJAP.37.1107Google Scholar
9. Lee, S. K., Ph. D Dissertation: Seoul National University, Seoul, Korea (2000).Google Scholar
10. Migita, S., Kasai, Y., Ota, H., and Sakai, S., Appl. Phys. Lett. 71, 3712 (1997).Google Scholar
11. Thesis, C. D., Yeh, J., and Schlom, D. G., Appl. Phys. Lett. 72, 2817 (1998).10.1063/1.121468Google Scholar
12. Nicollian, E. H. and Brews, J. R., MOS (Metal Oxides Semiconductor) Physics and Technology (Wiley, New York, 1982), p. 150.Google Scholar
13. Yi, S. C., Choe, J. S., Moon, C. R., and Kwun, S. I., Appl. Phys. Lett. 73, 903 (1998).10.1063/1.122443Google Scholar