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Formation and Properties of Porous Si Superlattices

Published online by Cambridge University Press:  28 February 2011

M.G. Berger ,
R. Arens-Fischer ,
St. Frohnhoff ,
C. Dieker ,
K. Winz ,
H. Münder ,
H. Lüth ,
M. Arntzen  and
W. Theiss
M.G. Berger
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
R. Arens-Fischer
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
St. Frohnhoff
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
C. Dieker
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
K. Winz
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Münder
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
H. Lüth
Affiliation:
Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
M. Arntzen
Affiliation:
I. Physikalisches Institut, RWTH Aachen, D-52056 Aachen, Germany
W. Theiss
Affiliation:
I. Physikalisches Institut, RWTH Aachen, D-52056 Aachen, Germany
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Abstract

Porous silicon superlattices (PS-SL) were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), spectroscopic ellipsometry and reflectance spectroscopy. Type I superlattices were formed by periodically changing the current density during the etch process. The quality of the interface between layers of different porosity depends on the quality of the silicon substrate. Optical components such as Bragg reflectors or Fabry-Perot filters were designed using the optical data of single porous layers. A good long term stability of the layers is achieved by using thermal oxidation steps. Type II superlattices were formed on substrates with layers of alternating doping level. The more complex layer structure of these superlattices is explained by the selectivity of the etch process on the doping level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 327
Copyright
Copyright © Materials Research Society 1995

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References

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