Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-29T11:08:34.641Z Has data issue: false hasContentIssue false

Formation of Submicron Single Crystal Particles and Dots by Laser Ablation

Published online by Cambridge University Press:  28 February 2011

Hong Wu
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
R. D. Vispute
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
Get access

Abstract

We have investigated the formation of micron-sized single crystal dots of germanium by pulsed laser ablation. The laser ablation of a Ge target (KrF excimer laser λ=248 nm, pulse rate 10Hz, pulse duration 25x10−9 seconds, and energy 10J /cm2) results in the formation of micron and submicron liquid droplets which are ejected from the target. These droplets can be crystallized into single crystal dots on lattice-matched substrates by rapid liquid-phase recrystallization. We report the details of microstructure as a function of dot size. It is found that under these conditions, below a critical size (about 2μm), the dots are crystalline;above which dots become polycrystalline. We discuss the implications of the results in producing doped and undoped single-crystal quantum dots for device applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Singh, R. K., Holland, O. W. and Narayan, J., J. Appl. Phys. 68, 233 (1990).Google Scholar
2 Blank, D. H. et al. , Materials Science and Engineering, B13, 67 (1992).Google Scholar
3 Leonard, D. et al. , J. Vac. Sci. Tech. B12, 1063 (1994).Google Scholar
4 Gaylord, et al. , Proc. IEEE 79, 1159 (1991).Google Scholar
5 Singh, R. K. and Bhattacharya, D., Appl. Phys. Lett. 61, 483 (1992).Google Scholar