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Giant exciton-light coupling in large size semiconductor quantum dots

Published online by Cambridge University Press:  11 February 2011

Bernard Gil  and
Alexey V. Kavokin
Bernard Gil
Affiliation:
Université de Montpellier II-Groupe d'Etude des Semiconducteurs – case courrier 074 – 34 095 Montpellier CEDEX 5, France
Alexey V. Kavokin
Affiliation:
LASMEA, UMR 6602, Université Blaise Pascal Clermont-Ferrand II, 24, Avenue des Landais, 63177 Aubière, France
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Abstract

We investigate the strength of the coupling of the electronic states with the electromagnetic field in semiconductor nanospheres, taking into account the retardation effect. We show that the coupling strength is particularly strong: the bulk properties are so enhanced that the radiative decay time can reach some 30 picoseconds for quantum dots sizes of some 30 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E13.10
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

These values are taken from d'Andrea, A. and red. Sole Physical Review B, 38, 1197, (1988),Google Scholar
Ivchenko, E.L., Kavokin, A.V., Kochereshko, V.P., Pozina, G.R., Uraltsev, I.N., Yakovlev, D.R., Landwehr, G., Bicknell, R.N., Phys. Rev. B. 46, 7713 (1992),Google Scholar
Gil, B., Abounadi, A., Blasio, M.di, Bouchara, D., Calas, J., Averous, M., Briot, O., Briot, N., Cloitre, T., Aulombard, R.L. and Gil, B., Physical Review B, 50, 11 677, (1994),Google Scholar
Gil, B. Semiconductors and Semi-metals, vol 57, Chapter 6, 209, (1999),Google Scholar
Zamfirescu, M., Kavokin, A., Gil, B., Malpuech, G., and Kaliteevski, M., Phys. Rev. B 65, R161205 (2002)Google Scholar
Kavokin, A., Malpuech, G., and Langbein, W., Solid State Commun. 120, 259 (2001)Google Scholar
3- Gupalov, S. V., Ivchenko, E. L., and Kavokin, A. V., J. Exp. Theor. Phys. 86, 388 (1998)Google Scholar
4- Norris, D. J., Efros, A. L., Rosen, M., and Bawendi, M. G., Phys. Rev. B 53, 16347 (1996)Google Scholar
5- Kavokin, A. V., Phys. Rev. B 50, 8000 (1994)Google Scholar
6- Rashba, E. I. and Gurgenishvili, G. E., Fiz. Tverd. Tela (Leningrad) 4, 1029 (1962) - Sov. Phys. Solid State 4, 759 (1962)Google Scholar
7- Note the typing errors in Gil, B. and Kavokin, A. Appl. Phys. Let., 55, 55, (2002)Google Scholar
8- Lefebvre, P., Mathieu, H., Allègre, J., Richard, T, Combettes-Roos, A., Pauthe, M., and Granier, W. Semicond. Sci. Technol. 12, 958, (1997).Google Scholar