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The Growth and Optimization of InPSb/InGaAs/InAsSb Strained-Layer Superlattice Emitters by Metal Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

R. M. Biefeld  and
S. R. Kurtz
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185-0601, USA
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, NM 87185-0601, USA
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Abstract

We have prepared InAsSb/InGaAs strained-layer superlattices (SLS's) and InPSb confinement layers using metal-organic chemical vapor deposition (MOCVD) for use as infrared emitters. X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS's. Photoluminescence linewidth and intensity were used as a measure of the quality of the structures. Typical FWHM were less than 10 meV. The presence of interface layers were indicated by broadened x-ray diffraction peaks for samples grown under non-optimized conditions. Two types of interfacial layers apparently due to a difference in composition at the interfaces were observed with transmission electron microscopy (TEM). The width of the x-ray peaks can be explained by a variation of the interfacial layer thicknesses. Optimized growth resulted in SLS's with narrow x-ray peaks and high radiative efficiency. Room temperature LEDs operating between 4-5 μm have been prepared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 283
Copyright
Copyright © Materials Research Society 1995

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References

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