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Growth of Large AlN Single Crystals Along the [0001] Direction

Published online by Cambridge University Press:  01 February 2011

Ziad Georges Herro ,
Dejin Zhuang ,
Raoul Schlesser ,
Ramon Collazo  and
Zlatko Sitar
Ziad Georges Herro
Affiliation:
zgherro@ncsu.edu, NCSU, Materials Science, 1001 Capability Dr., Raleigh, NC, 27695, United States, 919-515-8804
Dejin Zhuang
Affiliation:
dzhuang@ncsu.edu, NCSU, Materials Science and Eng.
Raoul Schlesser
Affiliation:
raoul_schlesser@ncsu.edu, NCSU, Materials Science and Eng.
Ramon Collazo
Affiliation:
rcollaz@unity.ncsu.edu, NCSU, Materials Science and Eng.
Zlatko Sitar
Affiliation:
sitar@ncsu.edu, NCSU, Materials Science and Eng.
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Abstract

We have demonstrated growth of large AlN single crystals using (0001)-oriented AlN seeds. Boules with a diameter of 15 mm and length up to 12 mm were obtained from 5 mm seeds. Step flow growth was observed on both Al and N-polar surfaces. N-polar face was suitable for growth within a large window of growth parameters while the Al-polar seeds yielded high-quality crystals only at low supersaturation.

Keywords

III-Vcrystal growthmorphology
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF21-01
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Slack, G.A., McNelly, T.F., J. Cryst. Growth 34, 263 (1976)CrossRefGoogle Scholar
2. Dalmau, R., Ragothamacher, B., Dudley, M., Schlesser, R., Sitar, Z., Mat. Res. Soc. Symp. Proc. 798, Y2.9.1 (2004)Google Scholar
3. Bickermann, M., Epelbaum, B.M., Winnacker, A., J. Cryst. Growth 269, 432 (2004)CrossRefGoogle Scholar
4. Dryburgh, P.M., J. Cryst. Growth 125, 65 (1992)CrossRefGoogle Scholar
5. Schlesser, R., Dalmau, R., and Sitar, Z., J. Cryst. Growth 241, 416 (2002)CrossRefGoogle Scholar
6. Zhuang, D., Schlesser, R., and Sitar, Z., Mater. Res. Soc. Symp. Proc. 831, E11.1 (2005)CrossRefGoogle Scholar
7. Noveski, V., Schlesser, R., Mahajan, S., Beaudoin, S., Sitar, Z., J. Cryst. Growth 264, 369 (2004)CrossRefGoogle Scholar
8. Schowalter, L.J., Slack, G.A., Whitlock, J.B., Morgan, K., Schujman, S.B., Raghothamachar, B., Dudley, M., and Evans, K.R., phys. stat. sol. (c) 0, 1997 (2003)CrossRefGoogle Scholar
9. Edgar, J. H., Liu, L., Liu, B., Zhuang, D., Chaudhuri, J., Kuball, M., Rajasinggam, S., J. Cryst. Growth 246, 187 (2002)CrossRefGoogle Scholar
10. Liu, L., Liu, B., Shi, Y., Edgar, J. H., MRS Internet J. Nitride Semicond. Res. 6, 7 (2001)CrossRefGoogle Scholar
11. Dalmau, R., Schlesser, R., Rodriguez, B.J., Nemanich, R.J., Sitar, Z., J. Cryst. Growth 81, 68 (2005)CrossRefGoogle Scholar
12. Epelbaum, B.M., Seitz, C., Magerl, A., Bickermann, M., Winnacker, A., J. Cryst. Growth 265 577 (2004)CrossRefGoogle Scholar
13. Schlesser, R., Sitar, Z., J. Cryst. Growth 234, 349 (2002)CrossRefGoogle Scholar
14. Epelbaum, B.M., Bickermann, M., Winnacker, A., J. Cryst. Growth 275, e479 (2005)CrossRefGoogle Scholar
15. Herro, Z.G., Epelbaum, B.M., Bickermann, M., Seitz, C., Magerl, A., Winnacker, A., J. Cryst. Growth 275, 68 (2005)CrossRefGoogle Scholar
16. http://www.semitech.us/.Google Scholar
17. Zhuang, D., Edgar, J.H., Liu, L., Liu, B. and Walker, L., MRS Internet J. Nitride Semicond. Res. 7, 4 (2002)CrossRefGoogle Scholar
18. http://webbook.nist.gov/chemistry/ Google Scholar
19. Burton, W.K., Cabrera, N., Frank, F.C., Phil. Phil. Trans. R. Soc. A 243, 866, 299 (1951)Google Scholar