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High Current Gain Triple Ion Implanted 4H-SiC BJT

Published online by Cambridge University Press:  31 January 2011

Taku Tajima ,
Tadashi Nakamura ,
Yuki Watabe ,
Masataka Satoh  and
Tohru Nakamura
Taku Tajima
Affiliation:
taku.tajima.km@gs-eng.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Tadashi Nakamura
Affiliation:
tadashi.nakamura.6g@gs-eng.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Yuki Watabe
Affiliation:
yuki.watabe.no@gs-eng.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, Hosei Univ., Tokyo, Japan
Tohru Nakamura
Affiliation:
tohru@hosei.ac.jp, Hosei Univ., Tokyo, Japan
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Abstract

We investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.

Keywords

ion-implantationdevicescrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B08-03
Copyright
Copyright © Materials Research Society 2010

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References

[1] Toshiyuki, Ohno, Naoto, Kobayashi, “Structure and distribution of secondary defects in high energy ion implanted 4H-SiC,” J. Appl. Phys., Vol. 89, Jun. 2001, pp. 933–941.Google Scholar
[2] Aberg, D., Hallen, A., Pellegrino, P., Svensson, B. G., “Nitrogen deactivation by implantationinduced defects in 4H-SiC epitaxial layers,” Appl. Phys. Lett. Vol. 78, May 2001, pp. 2908–2910.10.1063/1.1369611Google Scholar
[3] Tajima, Taku, Uchiumi, Satoshi, Tsukamoto, Kenta, Takenaka, Kazumasa, Satoh, Masataka, Nakamura, Tohru, “Effect of base impurity concentration on DC characteristics of double ion implanted 4H-SiC BJTs,” in Mater. Res. Soc. Proc., Vol 1069, 2008, pp. 269–272.10.1557/PROC-1069-D07-20Google Scholar