Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-10T06:54:21.104Z Has data issue: false hasContentIssue false
  • English
  • Français

High Efficiency Hydrogenated Nanocrystalline Silicon Solar Cells Deposited at High Rates

Published online by Cambridge University Press:  01 February 2011

Guozhen Yue ,
Laura Sivec ,
Baojie Yan ,
Jeff Yang  and
Subhendu Guha
Guozhen Yue
Affiliation:
gyue@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Laura Sivec
Affiliation:
lsivec@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Baojie Yan
Affiliation:
byan@scholarone.com, United Solar Ovonic LLC, Troy, Michigan, United States
Jeff Yang
Affiliation:
jyang@uni-solar.com, United Solar Ovonic LLC, 1100 West Maple Road, Troy, Michigan, 48084, United States
Subhendu Guha
Affiliation:
sguha@uni-solar.com, United Solar Ovonic LLC, Troy, Michigan, United States
Get access

Abstract

We report recent progress on hydrogenated nanocrystalline silicon (nc-Si:H) solar cells prepared at different deposition rates. The nc-Si:H intrinsic layer was deposited, using a modified very high frequency (MVHF) glow discharge technique, on Ag/ZnO back reflectors (BRs). The nc-Si:H material quality, especially the evolution of the nanocrystallites, was optimized using hydrogen dilution profiling. First, an initial active-area efficiency of 10.2% was achieved in a nc-Si:H single-junction cell deposited at ~5 Å/s. Using the improved nc-Si:H cell, we obtained 14.5% initial and 13.5% stable active-area efficiencies in an a-Si:H/nc-Si:H/nc-Si:H triple-junction structure. Second, we achieved a stabilized total-area efficiency of 12.5% using the same triple-junction structure but with nc-Si:H deposited at ~10 Å/s; the efficiency was measured at the National Renewable Energy Laboratory (NREL). Third, we developed a recipe using a shorter deposition time and obtained initial 13.0% and stable 12.7% active-area efficiencies for the same triple-junction design.

Keywords

amorphousphotovoltaicnanostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A21-01
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nasuno, Y., Kondo, M., and Matsuda, A., Proc. of the 28th IEEE PVSC, 142 (2000).Google Scholar
2 Li, H., Franken, R.H., Rath, J., and Schropp, R.E.I., Sol. Energy Mater. Sol. Cells 93, 338 (2009).Google Scholar
3 Yue, G., Sivec, L., Yan, B., Yang, J., and Guha, S., Mater. Res. Soc. Symp. Proc. 1153, A10–05 (2009)Google Scholar
4 Yue, G., Sivec, L., Owens, J.M., Yan, B., Yang, J., and Guha, S., Appl. Phys. Lett. 95, 263501 (2009).Google Scholar
5 Yan, B., Yue, G., Yang, J., Guha, S., Williamson, D.L., Han, D., and Jiang, C., Appl. Phys. Lett. 85, 1955 (2004).Google Scholar
6 Yan, B., Yue, G., Owens, J.M., Yang, J., and Guha, S., Appl. Phys. Lett. 85, 1925 (2004).Google Scholar
7 Yue, G., Yan, B., Ganguly, G., Yang, J., and Guha, S., Appl. Phys. Lett. 88, 263507 (2006).Google Scholar
8 Green, M.A., Emery, K., Hishikawa, Y., and Warta, W., Prog. Photovolt: Res. Appl. 17, 320 (2009).Google Scholar