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High Mobility a-Si:H TFT Fabricated by Hot Wire Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Chun-Yuan Hsueh ,
Chieh-Hung Yang  and
Si-Chen Lee
Chun-Yuan Hsueh
Affiliation:
r93943056@ntu.edu.tw, National Taiwan University, Department of Electrical Engineering & Graduate Institute of Electronics Engineering, Taipei, Taiwan, Province of China
Chieh-Hung Yang
Affiliation:
F93943052@ntu.edu.tw, National Taiwan University, Department of Electrical Engineering & Graduate Institute of Electronics Engineering, Taipei, Taiwan, Province of China
Si-Chen Lee
Affiliation:
sclee@cc.ee.ntu.edu.tw, National Taiwan University, Department of Electrical Engineering & Graduate Institute of Electronics Engineering, Taipei, Taiwan, Province of China
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Abstract

The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

Keywords

amorphousthin filmdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A19-07
Copyright
Copyright © Materials Research Society 2010

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