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High Sensitivity FT-IR-Ras for Silicon Surface Study

Published online by Cambridge University Press:  21 February 2011

Hisayoshi Ohshima ,
Tsuneo Urisu ,
Yoshiyasu Yamada  and
Tadashi Hattori
Hisayoshi Ohshima
Affiliation:
“Structure and function property”, PRESTO, JRDC, 5-9-4 Tokodai, Tsukuba 300-26, Japan
Tsuneo Urisu
Affiliation:
Institute for Molecular Science, Myodaiji, Okazaki 444, Japan
Yoshiyasu Yamada
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1 Komenoki, Nisshin, Aichi 470-01, Japan
Tadashi Hattori
Affiliation:
Research Laboratories, Nippondenso Co., Ltd., 500-1 Komenoki, Nisshin, Aichi 470-01, Japan
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Abstract

A novel configuration for Fourier-transform infrared reflection absorption spectroscopy (FT-IR-RAS) has been devised to study the nature of silicon wafer surfaces in the wide IR irradiation region (especially below 1300 cm−1) with high sensitivity. The configuration is basically similar to a conventional one of FT-IR-RAS except that a optical-flat mirror is placed on a silicon wafer surface and the IR beam is incident on the back side of the wafer with a grazing angle. The sensitivity of the novel technique was estimated by the observation of the stretching vibration absorption of the Si-Hx bond (2070-2150 cm−1) on HF/NH4F-treated Si(111) surfaces and Si-O bond (1000-1250 cm−1) of chemically oxidized layer ( ∼0.7 nm ) on Si(111) surfaces. The dependence of Si-Hx absorption peaks intensities on the composition of HF/NH4.F solutions was clearly observed. Furthermore, Si-O bond peak corresponding to the longitudinal optical phonon was also detected.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 413
Copyright
Copyright © Materials Research Society 1994

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References

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