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Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

Published online by Cambridge University Press:  01 February 2011

M. S. Mason ,
C.M. Chen  and
H.A. Atwater
M. S. Mason
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology Pasadena, CA 91107, U.S.A.
C.M. Chen
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology Pasadena, CA 91107, U.S.A.
H.A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics California Institute of Technology Pasadena, CA 91107, U.S.A.
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Abstract

We investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300°C on silicon [100] substrates using a high H2:SiH4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A6.14
Copyright
Copyright © Materials Research Society 2003

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